Nogales Díaz, EmilioMéndez Martín, BianchiPiqueras de Noriega, JavierPlugaru, R2023-06-202023-06-202003-01[1] Shimizu-Iwayama T, Nakao S and Saitoh K 1994 Appl. Phys. Lett. 65 1814 [2] Zhao X, Schoenfeld O, Kusano J, Aoyagi Y and Sugano T 1994 Japan. J. Appl. Phys. 33 L649 [3] Cullis A G, Canham L T and Calcott P D 1997 J. Appl. Phys. 82 909 [4] Kanemitsu Y 1994 Phys. Rev. B 49 16845 [5] Wolkin M V, Jorne J, Fauchet P M, Allan G and Delerue C 1999 Phys. Rev. Lett. 82 197 [6] Holt D B 1994 Polycrystalline Semiconductors III-Physics and Technology, Solid State Phenomena vol 37–38 ed H P Strunk, J H Werner, B Fortin and O Bonnaud (Zurich: Trans. Tech.) p 171 [7] Palm J 1993 J. Appl. Phys. 74 1169 [8] Díaz-Guerra C and Piqueras J 1999 J. Appl. Phys. 86 1874 [9] Feenstra R M 1994 Surf. Sci. 299/300 965 [10] Hamers R J, Tromp R M and Demuth J E 1986 Phys. Rev. Lett. 56 1972 [11] Plugaru R, Craciun G, Nastase N, Méndez B, Cremades A, Piqueras J and Nogales E 2000 J. Porous Mater. 7 291 [12] Nogales E, Méndez B, Piqueras J and Plugaru R 2001 Semicond. Sci. Technol. 16 789 [13] Kazmerski L L 1991 J. Vac. Sci. Technol. B 9 1549 [14] Koschinski P, Kaufmann K and Balk L J 1994 Proc. 13th Int. Cong. on Electron Microscopy (Paris: Les Editions de Physique) p 11210957-448410.1088/0957-4484/14/1/315https://hdl.handle.net/20.500.14352/50969© 2003 IOP Publishing Ltd. This work has been supported by MCYT (Project MAT 2000-2119). RP acknowledges MECD for the research grant SB2000-0164.Nanocrystalline silicon films, with an average nanocrystal size of about 10 nm, obtained by boron implantation of amorphous silicon layers, have been studied by remote-beam-induced current (REBIC) in a scanning tunnelling microscope (STM) and by current imaging tunnelling spectroscopy. STM images reveal a cell structure with cell sizes of about 200 nm. STM-REBIC images display space-charge regions associated with the cell boundaries. The STM-REBIC contrast has been found to depend on the implantation dose and the thermal treatment given to the sample. The results show the capability of STM-REBIC to image electrically active regions in nanocrystalline silicon films with a resolution of up to 10 nm.engjournal articlehttp://iopscience.iop.org/0957-4484/14/1/315http://iopscience.iop.orgopen access538.9Luminescence PropertiesTunneling-MicroscopyPorous SiliconStatesFísica de materiales