Nogales Díaz, EmilioMéndez Martín, María BianchiPiqueras De Noriega, Francisco JavierPlugaru, R2023-06-202023-06-202003-010957-448410.1088/0957-4484/14/1/315https://hdl.handle.net/20.500.14352/50969© 2003 IOP Publishing Ltd. This work has been supported by MCYT (Project MAT 2000-2119). RP acknowledges MECD for the research grant SB2000-0164.Nanocrystalline silicon films, with an average nanocrystal size of about 10 nm, obtained by boron implantation of amorphous silicon layers, have been studied by remote-beam-induced current (REBIC) in a scanning tunnelling microscope (STM) and by current imaging tunnelling spectroscopy. STM images reveal a cell structure with cell sizes of about 200 nm. STM-REBIC images display space-charge regions associated with the cell boundaries. The STM-REBIC contrast has been found to depend on the implantation dose and the thermal treatment given to the sample. The results show the capability of STM-REBIC to image electrically active regions in nanocrystalline silicon films with a resolution of up to 10 nm.engjournal articlehttp://iopscience.iop.org/0957-4484/14/1/315http://iopscience.iop.orgopen access538.9Luminescence PropertiesTunneling-MicroscopyPorous SiliconStatesFísica de materiales