Díez Alcántara, EduardoDomínguez-Adame Acosta, FranciscoSánchez, Angel2023-06-202023-06-201995-05-010021-897910.1063/1.359404https://hdl.handle.net/20.500.14352/59376© 1995 American- Institute of Physics. F. D.-A. acknowledges support from UCM through project PR161/93-4811. A. S. acknowledges partial support from C.I.C. y T. (Spain) through project PB92-0248 and by the European Union Human Capital and Mobility Programme through contract ERBCHRXCT930413.We study resonant tunneling in B-S-doped diodes grown by Si-molecular beam epitaxy. A Thomas-Fermi approach is used to obtain the conduction-band modulation. Using a scalar Hamiltonian within the effective-mass approximation. we demonstrate that the occurrence of negative differential resistance (NDR) only involves conduction-band states, whereas interband tunneling effects seem to be negligible. Our theoretical results are in very good agreement with recent experimental observations of NDR in this type of diode. 0 1995 American Institute of Physics.engjournal articlehttp://dx.doi.org/10.1063/1.359404http://scitation.aip.orgopen access538.9PhysicsAppliedFísica de materiales