Cremades Rodríguez, Ana IsabelPiqueras De Noriega, Francisco JavierSolís, J.2023-06-202023-06-201996-05-150021-897910.1063/1.362371https://hdl.handle.net/20.500.14352/58861© 1996 American Institute of Physics. This work has been supported by DGICYT (Projects Nos. PB-93-1256 and HP94-098).Planarization of large grain diamond films has been induced by 193 nm excimer laser irradiation. Secondary emission images and cathodoluminescence (CL) in the scanning electron microscope have been used to characterize-the irradiated area. Irradiation causes changes in the structure of defects involving nitrogen and vacancies. Evolution of the CL signal with the number of pulses indicates that the luminescence intensity tends to stabilize when a smooth film surface is obtained.engjournal articlehttp://dx.doi.org/10.1063/1.362371http://scitation.aip.org/open access538.9Chemical-Vapor-DepositionDefectsImpuritiesFísica de materiales