Statistical anomalies of bitflips in SRAMs to discriminate MCUs from SEUs

Clemente Barreira, Juan AntonioFranco Peláez, Francisco JavierVilla, FrancescaRey, SoleBaylac, MaudMecha López, HortensiaAgapito Serrano, Juan AndrésPuchner, HelmutHubert, GuillaumeVelazco, Raoul2023-06-182023-06-182015-09-18978-1-5090-0232-010.1109/RADECS.2015.7365670https://hdl.handle.net/20.500.14352/24710©IEEE 2015 European Conference on Radiation and Its Effects on Components and Systems (RADECS 2015) (15. 2015. Moscú). Date of Conference: 14-18 Sept. 2015This paper presents an approach to discern MCUs from SEUs in SRAM memories. Experiments involving radiation tests with 14-MeV neutrons on two successive generations (130 and 90 nm) of Cypress devices are presented.engStatistical anomalies of bitflips in SRAMs to discriminate MCUs from SEUsAnomalías estadísticas de los bits corruptos en memorias estáticas de acceso aleatorio para distinguir eventos múltiples de simples.book parthttp://dx.doi.org/10.1109/RADECS.2015.7365670http://www.radecs2015.orghttp://ieeexplore.ieee.org/open access537.8539.16621.3.049.77SRAMsSingle event upsetsMultiple cell upsetsNeutron testsElectrónica (Física)RadiactividadCircuitos integrados2203.07 Circuitos Integrados