Enger, Luiz GuilhermeFlament, StephaneBhatti, Imtiaz-NoorGuillet, BrunoSing, Marc Lam ChokPierron, VictorLebargy, SylvainDíez, Jose ManuelVera, ArturoMartínez, IsidoroGuerrero, RubénPérez García, LucasPerna, PaoloCamarero, JulioMiranda, RodolfoGonzález, María TeresaMechin, Laurence2023-06-222023-06-222022-020018-946410.1109/TMAG.2021.3089373https://hdl.handle.net/20.500.14352/71377©2022Institute of Electrical and Electronics Engineers This work was supported by the European Union Horizon 2020 research and innovation program under Grant 737116.Single-layer magnetoresistive sensors were designed in a Wheatstone bridge configuration using La_2/_3Sr_1/_3MnO_3 ferromagnetic oxide thin film. Uniaxial anisotropy was induced by performing epitaxial deposition of the films on top of vicinal SrTiO_3 substrate. X-ray scan confirms the high crystalline quality of the films and the magnetic anisotropy was checked by magneto-optical Kerr effect measurements. Thanks to the anisotropic magnetoresistive effect and the very low noise measured in the devices, sub-nT resolution was achieved above 100 Hz at 310 K.engjournal articlehttp://dx.doi.org/10.1109/TMAG.2021.3089373https://ieeexplore.ieee.orgopen access538.9Giant magnetoresistanceBuffer layerSurfaceAnisotropic magnetoresistance (AMR)Functional oxideLa_2/_3Sr_1/_3MnO_3 thin filmMagnetic sensorPlanar Hall effect bridge (PHEB) sensorUniaxial anisotropyFísica de materialesFísica del estado sólido2211 Física del Estado Sólido