Uniformity characterization of SI-GaAs by cathodoluminescence and scanning electron acoustic microscopy

Méndez Martín, María BianchiPiqueras De Noriega, Francisco Javier2023-06-202023-06-2019890-85498-056-30951-3248https://hdl.handle.net/20.500.14352/60829© IOP Publishing LTD. Conference on Microscopy of Semiconducting Materials (1989. Oxford)The capabilities of SEAM in uniformity assessment of SI GaAs are investigated. Profiles of SEAM signals across the wafer and SEAM images of dislocation distribution are obtained. Part of the nonlinear signal shows a profile that is not related to dislocation distribution.Uniformity characterization of SI-GaAs by cathodoluminescence and scanning electron acoustic microscopybook partmetadata only access538.9Lec GaasSemiconductorsFísica de materiales