Domínguez-Adame Acosta, FranciscoMaciá Barber, Enrique AlfonsoMéndez Martín, María Bianchi2023-06-202023-06-201994-10-310375-960110.1016/0375-9601(94)90295-Xhttps://hdl.handle.net/20.500.14352/59007© Elsevier Science BV. The authors thank A. Sánchez for a critical reading of the manuscript. This work has been partially supported by Univeridad Complutense under project PR161/93-4811.We study the electronic structure of a new type of Fibonacci superlattice based on Si delta-doped GaAs. Assuming that delta-doped layers are equally spaced, quasiperiodicity is introduced by selecting two different donor concentrations and arranging them according to the Fibonacci series along the growth direction. The one-electron potential due to delta-doping is obtained by means of the Thomas-Fermi approach. The resulting energy spectrum is then found by solving the corresponding effective-mass wave equation. We find that a self-similar spectrum can be seen in the band structure. Electronic transport properties of samples are also discussed and related to the degree of spatial localization of electronic envelope functions.engElectronic-structure of fibonacci Si δ-doped GaAsjournal articlehttp://dx.doi.org/10.1016/0375-9601(94)90295-Xhttp://www.sciencedirect.com/http://arxiv.org/abs/cond-mat/9409073restricted access538.9Quasi-Periodic LatticesOne DimensionSuperlatticeFísica de materiales