Nemes, Norbert MarcelVisani, C.León Yebra, CarlosGarcía Hernández, M.Simon, F.Fehér, T.te Velthuis, S. G. E.Hoffmann, A.Santamaría Sánchez-Barriga, Jacobo2023-06-202023-06-202010-07-190003-695110.1063/1.3464960https://hdl.handle.net/20.500.14352/44573© 2010 American Institute of Physics. We thank A. Goldman for fruitful discussions within the framework of the joint U.S.-Spain NSF Materials World Network Grant No. 709584. Work was supported by the U.S. Department of Energy, Basic Energy Science under Contract Nos. DE-AC02-06CH11357 and DE-AC02NA25396, by Spanish MICINN under Contracts “Ramon y Cajal,” Grant Nos. MAT2008-06517 and CONSOLIDER INGENIO 2010 CSD2009-00013 IMAGINE, by CAM under PHAMA Grant No. S2009/Mat-1756, and by OTKA Grant Nos. K68807 and PF63954 and the “Bolyai” program of the Hungarian Academy of Sciences.We report a memory concept utilizing ferromagnet/superconductor/ferromagnet La_(0.7)Ca_(0.3)MnO_(3)/YBa_(2)Cu_(3)O_(7)/La_(0.7)Ca_(0.3)MnO_(3) thin film hybrid structures. The orientation of the magnetic field with respect to the ferromagnetic easy axis has a strong effect on superconductivity as indicated by a strong variation in the magnetoresistance MR. MR can be controlled by rotating a small magnetic field applied in the plane of the film in a way that is determined by the in-plane biaxial magnetic anisotropy. The proposed memory device has the advantages of superconducting detection elements fast response and low dissipation, small 100–150 Oe writing fields, and resistance read-out without need for applied field.engjournal articlehttp://dx.doi.org/10.1063/1.3464960http://scitation.aip.org/open access537Enhancement.ElectricidadElectrónica (Física)2202.03 Electricidad