Rodríguez Fernández, J.Carcelen, V.Hidalgo Alcalde, PedroVijayan, N.Piqueras De Noriega, Francisco JavierSochinskii, N. V.Pérez, J. M.Dieguez, E.2023-06-202023-06-202009-08-150021-897910.1063/1.3197031https://hdl.handle.net/20.500.14352/44202© 2009 American Institute of Physics. This work was partially supported by the following Projects: Grant Nos. MEC-ESP2006-09935, CM-S-0505/ MAT-079, and FP7-SEC-2007-01 “European Commision,” and Contract No. 14240/00/NL7SH “European Space Agency.” One of the authors, V.C., thanks MEC, Spain for financial support. N.V. is grateful to Department of Science and Technology, Government of India for providing the BOYSCAST fellowship. The author J.R.F. is thankful to the Universidad Autónoma of Madrid for the financial support.Cadmium zinc telluride, CdZnTe, bulk single crystals doped with 10^19 at./cm^3 of indium in the initial melt were grown by vertical Bridgman technique. The samples were investigated by energy dispersive spectroscopy, cathodoluminiscence (CL), and current-voltage behavior at room temperature. The results shows that Cd and Te vacancy concentration depend on the indium and zinc concentrations. CL measurements indicate a relationship between radiative centers associated to Cd and Te vacancies and resistivity values.engjournal articlehttp://dx.doi.org/10.1063/1.3197031http://scitation.aip.orgopen access538.9CdteGrowthFísica de materiales