Piqueras De Noriega, Francisco JavierSotillo Buzarra, BelénFernández Sánchez, Paloma2023-06-202023-06-202012-06-010022-024810.1016/j.jcrysgro.2012.04.002https://hdl.handle.net/20.500.14352/44025©2012 Elsevier B.V. This work was supported by MICINN (Projects MAT2009-07882 and CSD2009-0013). B. Sotillo acknowledges Ministerio de Educación (Subprograma FPU) of Spain for financial support.ZnS nanowires and nanoribbons have been obtained by the vapor–solid (VS) method. The morphology depends mainly on the deposition temperature; nanowires are grown at temperatures between 300 °C and 650 °C while the growth of nanoribbons takes place at deposition temperatures in the range 650 °C–900 °C. X-ray diffraction (XRD) and transmission electron microscopy (TEM) studies show that from cubic ZnS precursor hexagonal-phase nanostructures are obtained. Cathodoluminescence (CL) and photoluminescence (PL) measurements show a dominance of the native defects related emission compared to the near band edge emission, with marked differences between nanowires and nanoribbons.engjournal articlehttp://dx.doi.org/10.1016/j.jcrysgro.2012.04.002http://www.sciencedirect.comrestricted access538.9Doped ZnOSingleNanostructuresNanobeltsCathodoluminescencePhotoluminescenceSemiconductorsSpectroscopyTemperatureDepositionFísica de materiales