Storgards, J.Méndez Martín, María BianchiPiqueras De Noriega, Francisco JavierChenot, M.Dimroth, F.Bett, A.V.2023-06-202023-06-202004-070268-124210.1088/0268-1242/19/7/021https://hdl.handle.net/20.500.14352/50954© 2004 IOP Publishing Ltd. This work is carried out in the framework of a European Marie Curie project (HPMT-CT-2001-00215). Support of MCYT (MAT2003-00455) is acknowledged.The effect of electrochemical etching of n-type GaSb in aqueous solutions of HCl and HF has been analysed. By anodization in HCl, two different morphologies of porous layers were observed depending on the current density. At low current density (0.5 mA cm_(-2)) a macroporous layer is formed with the pores following preferential directions, while at high current density (15 mA cm_(-2)) pores of sizes less than 100 nm were observed. Furthermore, a comparison between the luminescence in the porous layer and bulk GaSb is also performed. On the other hand, anodization in HF leads to an electropolishing process and no porosification is obtained.engjournal articlehttp://iopscience.iop.org/0268-1242/19/7/021http://iopscience.iop.orgopen access538.9SiliconGaasCathodoluminescenceSemiconductorsSurfaceInpPhotoluminescenceInitiationGrowthPoresFísica de materiales