Zong, YiFranco Peláez, Francisco JavierHernández Cachero, AntonioAgapito Serrano, Juan AndrésFernandes, Ana C.Marques, José G.Rodríguez-Ruiz, Miguel ÁngelCasas-Cubillos, Juan2023-06-202023-06-202005-07-11https://hdl.handle.net/20.500.14352/53994© Copyright IEEE DOI: 10.1109/REDW.2005.1532679 ISBN: 0-7803-9367-8This paper describes the evolution of different commercial microprocessor supervisory circuits under neutron and gamma radiation. After the irradiation, the tested devices showed some interesting changes: an increase of supply current and the period of watchdog timer. It was also observed that threshold voltage hysteresis and the shift of TTL trigger level appeared in some devices.engconference posterhttp://ieeexplore.ieee.org/xpl/freeabs_all.jsp?arnumber=1532679open access537.8Gamma-ray effectsHysteresisIntegrated circuit testingMicroprocessor chipsNeutron effectsReference circuitsTTL trigger level shiftMicroprocessor supervisory circuitsMixed neutron-gamma radiation environmentSupply current increaseThreshold voltage hysteresisWatchdog timerCircuit testingClocksCryogenicsField programmable gate arraysGamma raysInductorsLarge Hadron ColliderMicroprocessorsNeutronsThreshold voltageElectrónica (Física)RadiactividadElectrónica (Informática)2203 Electrónica