Franco Peláez, Francisco JavierZong, YiAgapito Serrano, Juan Andrés2023-06-202023-06-202006-08-280018-949910.1109/TNS.2006.880474https://hdl.handle.net/20.500.14352/51321(c) 2006 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other users, including reprinting/ republishing this material for advertising or promotional purposes, creating new collective works for resale or redistribution to servers or lists, or reuse of any copyrighted components of this work in other worksRadiation tests have shown the existence of inactivity windows in analog switches. It means that the devices lose their ability to switch between ON and OFF states if the total radiation dose is placed between two characteristic values. Once the total radiation dose goes beyond the top value of the window, the switching ability reappears. A physical mechanism based on the evolution of the threshold voltage of irradiated NMOS transistors is proposed in this paper. Finally, consequences of inactivity windows in the conception of radiation tests are discussed.engjournal articlehttp://dx.doi.org/10.1109/TNS.2006.880474open access537.8CMOS analogue integrated circuitsField effect transistor switchesRadiation effectsSemiconductor device testingCMOS analog switchNMOS transistor irradiationInactivity windowsOn-off statePhysical mechanismRadiation testingTotal ionizing doseElectron acceleratorsInstrumentsIon acceleratorsIonizing radiationLarge Hadron ColliderNeutronsParticle beamsSuperconducting magnetsSwitchesTestingAnalog switchesComplementary metalOxide semiconductor (CMOS) devicesTotal ionizing dose (TID)Electrónica (Física)Radiactividad