Person: Baba, Yuriko Caterina
Loading...
First Name
Yuriko Caterina
Last Name
Baba
Affiliation
Universidad Complutense de Madrid
Faculty / Institute
Ciencias Físicas
Department
Física de Materiales
Area
Identifiers
2 results
Search Results
Now showing 1 - 2 of 2
Item Rashba coupling and spin switching through surface states of Dirac semimetals(New journal of physics, 2021) Baba, Yuriko Caterina; Domínguez-Adame Acosta, Francisco; Platero, Gloria; Molina, Rafael A.We study the effect of the Rashba spin-orbit coupling on the Fermi arcs of topological Dirac semimetals. The Rashba coupling is induced by breaking the inversion symmetry at the surface. Remarkably, this coupling could be enhanced by the interaction with the substrate and controlled by an external electric field. We study analytically and numerically the rotation of the spin of the surface states as a function of the electron's momentum and the coupling strength. Furthermore, a detailed analysis of the spin-dependent two-terminal conductance is presented in the clean limit and with the addition of a random distribution of impurities. Depending on the magnitude of the quadratic terms in the Hamiltonian, the spin-flip conductance may become dominant, thus showing the potential of the system for spintronic applications, since the effect is robust even in the presence of disorder.Item Effect of external fields in high Chern number quantum anomalous Hall insulators(Physical review B, 2022) Baba, Yuriko Caterina; Amado, Mario; Díez, Enrique; Domínguez-Adame Acosta, Francisco; Molina, Rafael A.A quantum anomalous Hall state with a high Chern number has so far been realized in multilayer structures consisting of alternating magnetic and undoped topological insulator (TI) layers. However, in previous proposals, the Chern number can only be tuned by varying the doping concentration or the width of the magnetic TI layers. This drawback largely restricts the applications of dissipationless chiral edge currents in electronics since the number of conducting channels remains fixed. In this paper, we propose a way of varying the Chern number at will in these multilayered structures by means of an external electric field applied along the stacking direction. In the presence of an electric field in the stacking direction, the inverted bands of the unbiased structure coalesce and hybridize, generating new inverted bands and collapsing the previously inverted ones. In this way, the number of Chern states can be tuned externally in the sample, without the need for modifying the number and width of the layers or the doping level. We showed that this effect can be uncovered by the variation of the transverse conductance as a function of the electric field at constant injection energy at the Fermi level.