Person: Sánchez Santolino, Gabriel
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First Name
Gabriel
Last Name
Sánchez Santolino
Affiliation
Universidad Complutense de Madrid
Faculty / Institute
Ciencias Físicas
Department
Física de Materiales
Area
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13 results
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Item Electrolyte gated synaptic transistor based on an ultra-thin film of La0.7Sr0.3MnO3(Advanced Electronic Materials, 2023) López Montes, Alejandro; Tornos Castillo, Javier; Peralta, Andrea; Barbero, Isabel; Fernandez Canizares, Francisco; Sánchez Santolino, Gabriel; Varela Del Arco, María; Rivera Calzada, Alberto Carlos; Camarero, Julio; León Yebra, Carlos; Santamaría Sánchez-Barriga, Jacobo; Romera, Miguel; Romera Rabasa, Miguel ÁlvaroDeveloping electronic devices capable of reproducing synaptic functionality is essential in the context of implementing fast, low-energy consumption neuromorphic computing systems. Hybrid ionic/electronic three-terminal synaptic transistors are promising as efficient artificial synapses since they can process information and learn simultaneously. In this work, an electrolyte-gated synaptic transistor is reported based on an ultra-thin epitaxial La0.7Sr0.3MnO3 (LSMO) film, a half-metallic system close to a metal-insulator transition. The dynamic control of oxygen composition of the manganite ultra-thin film with voltage pulses applied through the gate terminal allows reversible modulation of its electronic properties in a non-volatile manner. The conductance modulation can be finely tuned with the amplitude, duration, and number of gating pulses, providing different alternatives to gradually update the synaptic weights. The transistor implements essential synaptic features such as excitatory postsynaptic potential, paired-pulse facilitation, long-term potentiation/depression of synaptic weights, and spike-time-dependent plasticity. These results constitute an important step toward the development of neuromorphic computing devices leveraging the tunable electronic properties of correlated oxides, and pave the way toward enhancing future device functionalities by exploiting the magnetic (spin) degree of freedom of the half metallic transistor channel.Item Direct Transformation of Crystalline MoO3 into Few-Layers MoS2(Materials, 2020) Carrascoso, Felix; Sánchez Santolino, Gabriel; Hsu, Chun-wei; Nemes, Norbert Marcel; Castellanos-Gomez, Andres; Torres Pardo, María De La Almudena; Gant, Patricia; Mompeán, Federico J.; Kalantar-zadeh, Kourosh; Alonso, José A.; García Hernández, Mar; Frisenda, RiccardoWe fabricated large-area atomically thin MoS2 layers through the direct transformation of crystalline molybdenum trioxide (MoO3) by sulfurization at relatively low temperatures. The obtained MoS2 sheets are polycrystalline (~10–20 nm single-crystal domain size) with areas of up to 300 × 300 µm2, 2–4 layers in thickness and show a marked p-type behavior. The synthesized films are characterized by a combination of complementary techniques: Raman spectroscopy, X-ray diffraction, transmission electron microscopy and electronic transport measurements.Item Large intrinsic anomalous Hall effect in SrIrO_3 induced by magnetic proximity effect(Nature communications, 2021) Yoo, Myoung-Woo; Tornos Castillo, Javier; Sander, A.; Lin, Ling-Fang; Mohanta, Narayan; Peralta Somoza, Andrea; Sánchez Manzano, David; Gallego Toledo, Fernando; Haskel, D.; Freeland, J. W.; Keavney, D. J.; Choi, Y.; Strempfer, J.; Wang, X.; Cabero Piris, Mariona; Vasili, Hari Babu; Valvidares, Manuel; Sánchez Santolino, Gabriel; González Calbet, José María; Rivera Calzada, Alberto Carlos; León Yebra, Carlos; Rosenkranz, S.; Bibes, M.; Barthelemy, A.; Anane, A.; Dagotto, E.; Okamoto, S.; te Velthuis, S. G. E.; Santamaría Sánchez-Barriga, JacoboThe anomalous Hall effect (AHE) is an intriguing transport phenomenon occurring typically in ferromagnets as a consequence of broken time reversal symmetry and spin-orbit interaction. It can be caused by two microscopically distinct mechanisms, namely, by skew or side-jump scattering due to chiral features of the disorder scattering, or by an intrinsic contribution directly linked to the topological properties of the Bloch states. Here we show that the AHE can be artificially engineered in materials in which it is originally absent by combining the effects of symmetry breaking, spin orbit interaction and proximity-induced magnetism. In particular, we find a strikingly large AHE that emerges at the interface between a ferromagnetic manganite (La_(0.7)Sr_(0.3)MnO_3) and a semimetallic iridate (SrIrO_3). It is intrinsic and originates in the proximity-induced magnetism present in the narrow bands of strong spin-orbit coupling material SrIrO_3, which yields values of anomalous Hall conductivity and Hall angle as high as those observed in bulk transition-metal ferromagnets. These results demonstrate the interplay between correlated electron physics and topological phenomena at interfaces between 3d ferromagnets and strong spin-orbit coupling 5d oxides and trace an exciting path towards future topological spintronics at oxide interfaces. The anomalous Hall effect (AHE) occurs in ferromagnets caused by intrinsic and extrinsic mechanisms. Here, Yoo et al. report large anomalous Hall conductivity and Hall angle at the interface between a ferromagnet La_(0.7)Sr_(0.3M)nO_3 and a semimetallic SrIrO_3, due to the interplay between correlated physics and topological phenomena.- Project number: PIMCD355/23-24
Item Métodos innovativos en la docencia en el ámbito de electromagnetismo usando la herramienta Wooclap(2024) Biskup Zaja, Nevenko; Nemes, Norbert Marcel; León Yebra, Carlos; Santamaría Sánchez-Barriga, Jacobo; Sánchez Santolino, Gabriel; Sefrioui Khamali, Zouhair; Schmidt, Rainer; Varela Del Arco, María; Azcondo Sánchez, M. Teresa; Rivera Calzada, Alberto Carlos; Scimemi, Ignacio; Barbero Velasco, Isabel; Zamora Castro, Victor; Ternero Villar, Isabel; Romero de Paz, Julio Item Ferroionic inversion of spin polarization in a spin-memristor(APL materials, 2021) Rouco Gómez, Víctor; Gallego Toledo, Fernando; Hernández Martín, D.; Sánchez Manzano, David; Tornos Castillo, Javier; Beltrán Fínez, Juan Ignacio; Cabero Piris, Mariona; Cuéllar Jiménez, Fabian Andrés; Arias Serna, Diego; Sánchez Santolino, Gabriel; Mompean, F. J.; García Hernández, M.; Rivera Calzada, Alberto Carlos; Muñoz, María del Carmen; León Yebra, Carlos; Sefrioui Khamali, Zouhair; Santamaría Sánchez-Barriga, JacoboMagnetoelectric coupling in artificial multiferroic interfaces can be drastically affected by the switching of oxygen vacancies and by the inversion of the ferroelectric polarization. Disentangling both effects is of major importance toward exploiting these effects in practical spintronic or spinorbitronic devices. We report on the independent control of ferroelectric and oxygen vacancy switching in multiferroic tunnel junctions with a La_(0.7)Sr_(0.3)MnO_3 bottom electrode, a BaTiO_3 ferroelectric barrier, and a Ni top electrode. We show that the concurrence of interface oxidation and ferroelectric switching allows for the controlled inversion of the interface spin polarization. Moreover, we show the possibility of a spin-memristor where the controlled oxidation of the interface allows for a continuum of memresistance states in the tunneling magnetoresistance. These results signal interesting new avenues toward neuromorphic devices where, as in practical neurons, the electronic response is controlled by electrochemical degrees of freedom.Item Photovoltaic sensing of a memristor based in LSMO/BTO/ITO ferroionic tunnel junctions(Applied physics letters, 2022) Tenreiro Villar, Isabel; Rouco Gómez, Víctor; Sánchez Santolino, Gabriel; Gallego, Fernando; León Yebra, Carlos; Rivera Calzada, Alberto Carlos; Schuller, Schuller, Ivan K; Santamaría Sánchez-Barriga, JacoboMemristors based on oxide tunnel junctions are promising candidates for energy efficient neuromorphic computing. However, the low power sensing of the nonvolatile resistive state is an important challenge. We report the optically induced sensing of the resistive state of a memristor based on a La_0.7Sr_0.3MnO_3/BaTiO_3/In_2O_3:SnO_2 (90:10) heterostructure with a 3 nm thick BaTiO3 ferroelectric barrier. The nonvolatile memristive response originates from the modulation of an interfacial Schottky barrier at the La_0.7Sr_0.3MnO_3/BaTiO_3 interface, yielding robust intermediate memristive states. The Schottky barrier produces a photovoltaic response when illuminated with a 3.3 eV UV LED, which depends on the state. The open circuit voltage V_oc correlates linearly with the resistance of each state, enabling active sensing of the memristive state at light power densities as low as 20 mW/cm^2 and temperatures up to 100 K. This opens up avenues for the efficient and minimally invasive readout of the memory states in hybrid devices.Item Combining freestanding ferroelectric perovskite oxides with two-dimensional semiconductors for high performance transistors(Nano letters, 2022) Puebla, Sergio; Pucher, Thomas; Rouco Gómez, Víctor; Sánchez Santolino, Gabriel; Xie, Yong; Zamora Castro, Víctor; Cuéllar Jiménez, Fabian Andrés; Mompean, Federico; León Yebra, Carlos; Island, Joshua O.; García Hernández, Mar; Santamaría Sánchez-Barriga, Jacobo; Munuera, Carmen; García Hernández, Mar; Castellanos Gómez, AndrésWe demonstrate the fabrication of field-effect transistors based on single-layer MoS2 and a thin layer of BaTiO_3 (BTO) dielectric, isolated from its parent epitaxial template substrate. Thin BTO provides an ultrahigh-kappa gate dielectric effectively screening Coulomb scattering centers. These devices show mobilities substantially larger than those obtained with standard SiO_2 dielectrics and comparable with values obtained with hexagonal boron nitride, a dielectric employed for fabrication of high-performance two-dimensional (2D) based devices. Moreover, the ferroelectric character of BTO induces a robust hysteresis of the current vs gate voltage characteristics, attributed to its polarization switching. This hysteresis is strongly suppressed when the device is warmed up above the tetragonal-to-cubic transition temperature of BTO that leads to a ferroelectric-to-paraelectric transition. This hysteretic behavior is attractive for applications in memory storage devices. Our results open the door to the integration of a large family of complex oxides exhibiting strongly correlated physics in 2D-based devices.Item Bimodal ionic photomemristor based on a high-temperature oxide superconductor/semiconductor junction(Nature communications, 2023) El Hage, Ralph; Humbert, Vincent; Rouco Gómez, Víctor; Sánchez Santolino, Gabriel; Lagarrigue, Aurelien; Seurre, Kevin; Carreira, Santiago J. J.; Sander, Anke; Charliac, Jerome; Mesoraca, Salvatore; Trastoy, Juan; Briatico, Javier; Santamaría Sánchez-Barriga, Jacobo; Villegas, Javier E. E.Designing efficient photonic neuromorphic systems remains a challenge. Here, the authors develop a new class of memristor sensitive to the dual electro-optical history obtained by exploiting electrochemical, photovoltaic and photo-assisted oxygen ion motion effects at a high temperature superconductor / semiconductor interface. Memristors, a cornerstone for neuromorphic electronics, respond to the history of electrical stimuli by varying their electrical resistance across a continuum of states. Much effort has been recently devoted to developing an analogous response to optical excitation. Here we realize a novel tunnelling photo-memristor whose behaviour is bimodal: its resistance is determined by the dual electrical-optical history. This is obtained in a device of ultimate simplicity: an interface between a high-temperature superconductor and a transparent semiconductor. The exploited mechanism is a reversible nanoscale redox reaction between both materials, whose oxygen content determines the electron tunnelling rate across their interface. The redox reaction is optically driven via an interplay between electrochemistry, photovoltaic effects and photo-assisted ion migration. Besides their fundamental interest, the unveiled electro-optic memory effects have considerable technological potential. Especially in combination with high-temperature superconductivity which, in addition to facilitating low-dissipation connectivity, brings photo-memristive effects to the realm of superconducting electronics.- Project number: 422
Item Proyecto de soporte audiovisual a los laboratorios de electricidad y magnetismo(2023) Cuéllar Jiménez, Fabian Andrés; Beltrán Fínez, Juan Ignacio; Rouco Gómez, Víctor; Sánchez Santolino, Gabriel; Tornos Castillo, Javier Item Controlled sign reversal of electroresistance in oxide tunnel junctions by electrochemical-ferroelectric coupling(Physical review letters, 2020) Hernández Martín, David; Gallego Toledo, Fernando; Tornos Castillo, Javier; Rouco Gómez, Víctor; Beltrán Fínez, Juan Ignacio; Munuera, C.; Sánchez Manzano, David; Cabero Piris, Mariona; Cuéllar Jiménez, Fabian Andrés; Arias Serna, Diego; Sánchez Santolino, Gabriel; Mompean, F. J.; García Hernández, M.; Rivera Calzada, Alberto Carlos; Pennycook, S. J.; Varela Del Arco, María; Muñoz, María del Carmen; Sefrioui Khamali, Zouhair; León Yebra, Carlos; Santamaría Sánchez-Barriga, JacoboThe persistence of ferroelectricity in ultrathin layers relies critically on screening or compensation of polarization charges which otherwise destabilize the ferroelectric state. At surfaces, charged defects play a crucial role in the screening mechanism triggering novel mixed electrochemical-ferroelectric states. At interfaces, however, the coupling between ferroelectric and electrochemical states has remained unexplored. Here, we make use of the dynamic formation of the oxygen vacancy profile in the nanometerthick barrier of a ferroelectric tunnel junction to demonstrate the interplay between electrochemical and ferroelectric degrees of freedom at an oxide interface. We fabricate ferroelectric tunnel junctions with a La_0.7Sr_0.3MnO_3 bottom electrode and BaTiO_3 ferroelectric barrier. We use poling strategies to promote the generation and transport of oxygen vacancies at the metallic top electrode. Generated oxygen vacancies control the stability of the ferroelectric polarization and modify its coercive fields. The ferroelectric polarization, in turn, controls the ionization of oxygen vacancies well above the limits of thermodynamic equilibrium, triggering the build up of a Schottky barrier at the interface which can be turned on and off with ferroelectric switching. This interplay between electronic and electrochemical degrees of freedom yields very large values of the electroresistance (more than 10^6% at low temperatures) and enables a controlled switching between clockwise and counterclockwise switching modes in the same junction (and consequently, a change of the sign of the electroresistance). The strong coupling found between electrochemical and electronic degrees of freedom sheds light on the growing debate between resistive and ferroelectric switching in ferroelectric tunnel junctions, and moreover, can be the source of novel concepts in memory devices and neuromorphie computing.