Franco Peláez, Francisco Javier

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First Name
Francisco Javier
Last Name
Franco Peláez
Universidad Complutense de Madrid
Faculty / Institute
Ciencias Físicas
Estructura de la Materia, Física Térmica y Electrónica
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Now showing 1 - 10 of 65
  • Publication
    Laser induced single events in SRAMs
    (IEEE-Inst Electrical Electronics Engineers Inc, 2013-02) Palomar Trives, Carlos; López Calle, Isabel; Franco Peláez, Francisco Javier; Agapito Serrano, Juan Andrés; González Izquierdo, Jesús
    This paper is aimed at emulating the errors in semiconductor memories by space radiation with a pulsed laser that acts as an ion. A sensitivity map of the memory is performed identifying potential error areas and how many errors simultaneously occur.
  • Publication
    Radiation tolerant isolation amplifiers for temperature measurement
    (Elsevier Science BV, 2006-09-29) Zong, Yi; Franco Peláez, Francisco Javier; Agapito Serrano, Juan Andrés; Fernandes, Ana C.; Marques, José G.
    This paper concentrates on the selection of radiation tolerant isolation amplifiers, which are suitable for the signal conditioners for cryogenic system in the Large Hadron Collider (LHC). The evolution and the results of different commercial isolation amplifiers’ parameters under neutron and gamma radiation are presented. In most cases, the tested isolation amplifiers’ input offset voltage, bias currents and output offset voltage hardly changed during the radiation. The \{DC\} gain in input stage was only affected for some isolation amplifiers with a small open loop gain. Transmission coefficient showed decrease for all the tested isolation amplifiers. Also, the \{DC\} output voltage increased and the ripple voltage decreased for all the build-in isolated regulators. In addition, results on 1B41 signal conditioner showed that it was tolerant to 7–8×1012 n/cm2, which was 50\% higher than the expected dose in the LHC.
  • Publication
    Single Event Upsets under 14-MeV Neutrons in a 28-nm SRAM-based FPGA in Static Mode
    (IEEE-Inst Electrical Electronics Engineers Inc, 2020) Fabero Jiménez, Juan Carlos; Mecha López, Hortensia; Franco Peláez, Francisco Javier; Clemente Barreira, Juan Antonio; Korkian, Golnaz; Rey, Solenne; Cheymol, Benjamin; Baylac, Maud; Hubert, Guillaume; Velazco, Raoul
    A sensitivity characterization of a Xilinx Artix-7 FPGA against 14.2 MeV neutrons is presented. The content of the internal SRAMs and flip-flops were downloaded in a PC and compared with a golden version of it. Flipped cells were identified and classified as cells of the configuration RAM, BRAM, or flip-flops. SBUs and MCUs with multiplicities ranging from 2 to 8 were identified using a statistical method. Possible shapes of multiple events are also investigated, showing a trend to follow wordlines. Finally, MUSCA SEP3 was used to make assesment for actual environments and an improvement of SEU injection test is proposed.
  • Publication
    Inherent Uncertainty in the Determination of Multiple Event Cross Sections in Radiation Tests
    (IEEE-Inst Electrical Electronics Engineers Inc, 2020) Franco Peláez, Francisco Javier; Clemente Barreira, Juan Antonio; Korkian, Golnaz; Fabero Jiménez, Juan Carlos; Mecha López, Hortensia; Velazco, Raoul
    In radiation tests on SRAMs or FPGAs, two or more independent bitflips can be misled with a multiple event if they accidentally occur in neighbor cells. In the past, different tests such as the ``birthday statistics'' have been proposed to estimate the accuracy of the experimental results. In this paper, simple formulae are proposed to determine the expected number of false 2-bit and 3-bit MCUs from the number of bitflips, memory size and the method used to search multiple events. These expressions are validated using Monte Carlo simulations and experimental data. Also, a technique is proposed to refine experimental data and thus partially removing possible false events. Finally, it is demonstrated that there is a physical limit to determine the cross section of memories with arbitrary accuracy from a single experiment.
  • Publication
    Impact of High Particle Flux in Radiation Ground Tests with Protons
    (IEEE eXpress Conference Publishing, 2022-08-22) Rezaei, Mohammadreza; Martín Holgado, Pedro; Morilla García, Yolanda; Franco Peláez, Francisco Javier; Fabero Jiménez, Juan Carlos; Mecha López, Hortensia; Puchner, Helmut; Hubert, Guillaume; Clemente Barreira, Juan Antonio
    This abstract presents an experimental study of the impact of using a high flux in radiation ground tests on the measured cross-section of SRAMs. Experimental results obtained with 15 MeV protons will show that using a high particle flux makes the measured cross-section increase by almost 1 order of magnitude.
  • Publication
    The Selection of a radiation-tolerant DAC for the LHC (Part II: CMOS technology)
    (Instituto de Microelectrónica de Barcelona CNM-CSIC, 2003-02-14) Franco Peláez, Francisco Javier; Lozano Rogado, Jesús; Agapito Serrano, Juan Andrés
    Total dose & neutron tests on commercial CMOS digital-to-analog converters have been carried out. These results are related to those ones presented in the previous paper. This kind of devices is much more sensitive to ionizing radiation than to neutrons. That radiation changes the value of the MOSFET threshold voltage and this can put digital circuits out of action. In this case, the gradual destruction of the digital inputs was observed as a diminution of the output voltage levels. Also, the gamma radiation generates leakage currents that increase the consumption. Due to these converters tolerated less total radiation dose, their use in the LHC has been refused and the fast bipolar technology converters will be employed.
  • Publication
    Impact of Dynamic Voltage Scaling on SEU Sensitivity of COTS Bulk SRAMs and A-LPSRAMs against Proton Radiation
    (IEEE, 2022-01-05) Rezaei, Mohammadreza; Hubert, Guillaume; Martín-Holgado, Pedro; Morilla, Yolanda; Fabero Jiménez, Juan Carlos; Mecha López, Hortensia; Franco Peláez, Francisco Javier; Clemente Barreira, Juan Antonio
    In the aerospace industry, commercial-off-the-shelf (COTS) static random access memories (SRAMs) are a cost-effective solution for obtaining high performance at the system level, which is difficult to obtain using space-qualified components. In addition, the usage of dynamic voltage scaling (DVS) is commonly used in space environments, where low power consumption is a critical issue. This article presents an analysis of the sensitivity against single-event upsets (SEUs) of various COTS bulk SRAMs and advanced low-power SRAMs (A-LPSRAMs) against proton radiation when using DVS to save power. Experimental results will show clear evidence that the sensitivity to SEUs increases when the power is lowered. Two sets of successive technologies (130-, 90-, and 65-nm bulk SRAMs, and 150- and 110-nm A-LPSRAMs) are evaluated against 15-MeV protons and compared with results of 14-MeV neutrons presented in a previous work. Experimental data are finally compared with analytical simulations obtained by using the multiscales single-event phenomena predictive platform (MUSCA-SEP3) Monte Carlo tool to predict the effect of DVS on the SEE sensitivity on more modern technologies in the ITRS/IRDS roadmap.
  • Publication
    Load resistor as a worst-case parameter to investigate single-event transients in analog electronic devices
    (IEEE-Inst Electrical Electronics Engineers Inc, 2011-02-08) López Calle, Isabel; Franco Peláez, Francisco Javier; Agapito Serrano, Juan Andrés; González Izquierdo, Jesús
    One of the main phenomena that commit the reliability of analog electronic systems working in the outer space is the presence of energetic ions that produce spurious transients after crossing the device. These pulses are transmitted to the network loading the device and can eventually lead to dangerous situations as it has been observed in some spatial missions. This paper shows how the value of the resistor loading the device can affect the shape of the transients.
  • Publication
    Sistema autónomo de detección y almacenamiento de errores por sucesos aislados en SRAMs
    (Escuela Técnica Superior de Ingenieros Industriales. Universidad Politécnica de Madrid, 2013-07-10) Amigo de la Huerga, Ángel; Palomar Trives, Carlos; Franco Peláez, Francisco Javier; López Calle, Isabel; Cervera, María Fe; Hernández Cachero, Antonio; Agapito Serrano, Juan Andrés
    En esta contribución se explica el diseño, fabricación y verificación experimental de un sistema automático de lectura y escritura de memorias SRAM cuyo objeto es la determinación de la tasa de errores asociados a la acción de los rayos cósmicos e impurezas radiactivas en esa tecnología de fabricación. Se ha concebido este sistema para que se pudiera construir en una placa de reducidas dimensiones y que, de este modo, pudiera transportarse en la cabina de un avión durante vuelos comerciales.
  • Publication
    Radiation tolerant D/A converters for the LHC cryogenic system
    (Elsevier Science BV, 2005-11-20) Franco Peláez, Francisco Javier; Zong, Yi; Agapito Serrano, Juan Andrés; Marques, José G.; Fernandes, Ana C.; Casas-Cubillos, Juan; Rodríguez-Ruiz, Miguel Ángel
    The electronic instrumentation of the Large Hadron Collider (LHC) cryogenic system is expected to receive a large radiation dose (>10E13 n·cm−2 and 1–2 kGy (Si)) within 10 years of activity so all the electronic devices should tolerate this radiation level without a significant degradation. This paper focuses on the selection of a radiation tolerant 12-bit parallel input D/A converter suitable for the signal conditioners for cryogenic thermometry in the LHC. During an initial campaign, some candidate converters were irradiated to determine the most tolerant device. Once this was determined, a massive test was carried out. Some weak points of the selected device were addressed through the use of an external voltage source and a radiation tolerant operational amplifier. The tests show that a system consisting of an {AD565} D/A converter, coupled to an external voltage reference and an OPA627 operational amplifier can tolerate a total radiation dose up to 5×10E13 n·cm−2 and 2100 Gy (Si), thus satisfying the requirements set by CERN.