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Characterization of charged defects in Cd_xHg_(1-x)Te and CdTe crystals by electron beam induced current and scanning tunneling spectroscopy

dc.contributor.authorPanin, G. N.
dc.contributor.authorDíaz-Guerra Viejo, Carlos
dc.contributor.authorPiqueras De Noriega, Francisco Javier
dc.date.accessioned2023-06-20T19:02:06Z
dc.date.available2023-06-20T19:02:06Z
dc.date.issued1998-04-21
dc.description© 1998 American Institute of Physics. This work was supported by DGICYT (Project PB93-1256) and by CICYT (Project IN93-0012). The help of Professor A. M. Baro´, Dr. A. Asenjo, and Dr. J. Gómez-Herrero is greatfully acknowledged. G. Panin thanks Spanish MEC for a research grant.
dc.description.abstractA correlative study of the electrically active defects of CdxHg1-xTe and CdTe crystals has been carried out using a scanning electron microscope/scanning tunneling microscope (SEM/STM) combined system. Charged structural and compositional defects were revealed by the remote electron beam induced current (REBIC) mode of the scanning electron microscope. The electronic inhomogeneities of the samples were analyzed with nm resolution by current imaging tunneling spectroscopy (CITS) measurements, which showed the existence of built-in electrostatic barriers as well as local variations of the surface band gap in the defect areas imaged by REBIC.
dc.description.departmentDepto. de Física de Materiales
dc.description.facultyFac. de Ciencias Físicas
dc.description.refereedTRUE
dc.description.sponsorshipDGICYT
dc.description.sponsorshipCICYT
dc.description.sponsorshipMEC
dc.description.statuspub
dc.eprint.idhttps://eprints.ucm.es/id/eprint/26373
dc.identifier.doi10.1063/1.121298
dc.identifier.issn0003-6951
dc.identifier.officialurlhttp://dx.doi.org/10.1063/1.121298
dc.identifier.relatedurlhttp://scitation.aip.org
dc.identifier.urihttps://hdl.handle.net/20.500.14352/59142
dc.issue.number17
dc.journal.titleApplied physics Letters
dc.language.isoeng
dc.page.final2131
dc.page.initial2139
dc.publisherAmer Inst Physics
dc.relation.projectIDPB93-1256
dc.relation.projectIDIN93-0012
dc.rights.accessRightsopen access
dc.subject.cdu538.9
dc.subject.keywordSi(111)2x1 Surface
dc.subject.keywordMicroscopy
dc.subject.keywordCathodoluminescence
dc.subject.keywordCdte(001)
dc.subject.ucmFísica de materiales
dc.titleCharacterization of charged defects in Cd_xHg_(1-x)Te and CdTe crystals by electron beam induced current and scanning tunneling spectroscopy
dc.typejournal article
dc.volume.number72
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