Electrical properties of silicon supersaturated with titanium or vanadium for intermediate band material
| dc.book.title | Proceedings of the 2013 Spanich Conference on Electron Devices (CDE 2013) | |
| dc.contributor.author | Martil De La Plaza, Ignacio | |
| dc.contributor.author | García Hemme, Eric | |
| dc.contributor.author | García Hernansanz, Rodrigo | |
| dc.contributor.author | González Díaz, Germán | |
| dc.contributor.author | Olea Ariza, Javier | |
| dc.contributor.author | Prado Millán, Álvaro Del | |
| dc.contributor.editor | García, Héctor | |
| dc.contributor.editor | Castán, Elena | |
| dc.date.accessioned | 2023-06-20T05:46:14Z | |
| dc.date.available | 2023-06-20T05:46:14Z | |
| dc.date.issued | 2013 | |
| dc.description | Spanish Conference on Electron Devices (9.2013.Valladolid, España). Authors would like to acknowledge the CAI de Técnicas Físicas of the Universidad Complutense de Madrid for the ion implantations and metallic evaporations. This work was partially supported by the Project NUMANCIA II (Grant No. S-2009/ENE/1477) funded by the Comunidad de Madrid. Research by E. García-Hemme was also supported by a PICATA predoctoral fellowship of the Moncloa Campus of International Excellence (UCM-UPM). J. Olea and D. Pastor thanks Professor A. Martí and Professor A. Luque for useful discussions and guidance and acknowledge financial support from the MICINN within the program Juan de la Cierva (JCI-2011-10402 and JCI-2011-11471), under which this research was undertaken. | |
| dc.description.abstract | We have fabricated titanium and vanadium supersaturated silicon layers on top of a silicon substrate by means of ion implantation and pulsed laser melting processes. This procedure has proven to be suitable to fabricate an intermediate band (IB) material, i.e. a semiconductor material with a band of allowed states within the bandgap. Sheet resistance and Hall mobility measurements as a function of the temperature show an unusual behavior that has been well explained in the framework of the IB material theory, supposing that we are dealing with a junction formed by the IB material top layer and the n-Si substrate. Using an analytical model that fits with accuracy the experimental sheet resistance and mobility curves, we have obtained the values of the exponential factor for the thermically activated junction resistance of the bilayer, showing important differences as a function of the implanted element. These results could allow us to engineer the IB properties selecting the implanted element depending on the required properties for a specific application. | |
| dc.description.department | Depto. de Estructura de la Materia, Física Térmica y Electrónica | |
| dc.description.faculty | Fac. de Ciencias Físicas | |
| dc.description.refereed | TRUE | |
| dc.description.sponsorship | Comunidad de Madrid | |
| dc.description.sponsorship | MICINN | |
| dc.description.status | pub | |
| dc.eprint.id | https://eprints.ucm.es/id/eprint/25805 | |
| dc.identifier.doi | 10.1109/CDE.2013.6481421 | |
| dc.identifier.isbn | 978-1-4673-4666-5 | |
| dc.identifier.officialurl | http://dx.doi.org/10.1109/CDE.2013.6481421 | |
| dc.identifier.relatedurl | http://ieeexplore.ieee.org | |
| dc.identifier.uri | https://hdl.handle.net/20.500.14352/45519 | |
| dc.language.iso | eng | |
| dc.page.final | 380 | |
| dc.page.initial | 377 | |
| dc.page.total | 4 | |
| dc.publisher | IEEE | |
| dc.relation.ispartofseries | Spanish Conference on Electron Devices | |
| dc.relation.projectID | NUMANCIA II (S2009/ENE/1477) | |
| dc.relation.projectID | (JCI-2011-10402) | |
| dc.relation.projectID | (JCI-2011-11471) | |
| dc.rights.accessRights | restricted access | |
| dc.subject.cdu | 537 | |
| dc.subject.keyword | Hall Mobility | |
| dc.subject.keyword | Eemental Semiconductors | |
| dc.subject.keyword | Energy Gap | |
| dc.subject.keyword | Ion Implantation | |
| dc.subject.keyword | Laser Materials Processing | |
| dc.subject.keyword | Melting | |
| dc.subject.keyword | Semiconductor Thin Films | |
| dc.subject.keyword | Silicon | |
| dc.subject.keyword | Titanium | |
| dc.subject.keyword | Vanadium. | |
| dc.subject.ucm | Electricidad | |
| dc.subject.ucm | Electrónica (Física) | |
| dc.subject.unesco | 2202.03 Electricidad | |
| dc.title | Electrical properties of silicon supersaturated with titanium or vanadium for intermediate band material | |
| dc.type | book part | |
| dcterms.references | [1] D. J. Lockwood and L. Pavesi, "Silicon fundamentals for photonics applications," Silicon Photonics, vol. 94, pp. 1-50, 2004. [2] B. P. Bob, A. Kohno, S. Charnvanichborikarn, J. M. Warrender, I. Umezu, M. Tabbal, et al., "Fabrication and subband gap optical properties of silicon supersaturated with chalcogens by ion implantation and pulsed laser melting," Journal of Applied Physics, vol. 107, Jun 15 2010. [3] J. Olea, Á. del Prado, D. Pastor, I. Mártil, and G. González-Díaz, "Sub-bandgap absorption in Ti implanted Si over the Mott limit," Journal of Applied Physics, vol. 109, p. 113541, 2011. [4] E. García-Hemme, R. García-Hernansanz, J. Olea, D. Pastor, A. del Prado, I. Mártil, et al., "Sub-bandgap spectral photo-response analysis of Ti supersaturated Si," Applied Physics Letters, vol. 101, Nov 5 2012. [5] A. J. Said, D. Recht, J. T. Sullivan, J. M. Warrender, T. Buonassisi, P. D. Persans, et al., "Extended infrared photoresponse and gain in chalcogen-supersaturated silicon photodiodes," Applied Physics Letters, vol. 99, Aug 15 2011. [6] N. F. Mott, "Metal-insulator transition in extrinsic semiconductors," Advances in Physics, vol. 21, pp. 785-823, 1972. [7] A. Luque, A. Martí, E. Antolín, and C. Tablero, "Intermediate bands versus levels in non-radiative recombination," Physica BCondensed Matter, vol. 382, pp. 320-327, 2006. [8] A. Luque and A. Martí, "Increasing the efficiency of ideal solar cells by photon induced transitions at intermediate levels," Physical Review Letters, vol. 78, pp. 5014-5017, 1997. [9] G. González-Díaz, J. Olea, I. Mártil, D. Pastor, A. Martí, E. Antolín, et al., "Intermediate band mobility in heavily titanium-doped silicon layers," Solar Energy Materials and Solar Cells, vol. 93, pp. 1668-1673, 2009. [10] J. Olea, G. González-Díaz, D. Pastor, and I. Mártil, "Electronic transport properties of Ti-impurity band in Si," Journal of Physics D-Applied Physics, vol. 42, 2009. [11] J. Olea, M. Toledano-Luque, D. Pastor, E. San-Andrés, I. Mártil, and G. González-Díaz, "High quality Ti-implanted Si layers above the Mott limit," Journal of Applied Physics, vol. 107, 2010. [12] J. Olea, G. González-Díaz, D. Pastor, I. Mártil, A. Martí, E. Antolín, et al., "Two-layer Hall effect model for intermediate band Tiimplanted silicon," Journal of Applied Physics, vol. 109, p. 8, Mar 2011. [13] K. Sánchez, I. Aguilera, P. Palacios, and P. Wahnón, "Assessment through first-principles calculations of an intermediate-band photovoltaic material based on Ti-implanted silicon: Interstitial versus substitutional origin," Physical Review B, vol. 79, 2009. | |
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