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Modeling the Nonlinear Response of Silicon Photomultipliers

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dc.contributor.authorRosado Vélez, Jaime
dc.date.accessioned2023-11-06T09:10:30Z
dc.date.available2023-11-06T09:10:30Z
dc.date.issued2019
dc.descriptionSe deposita la versión preprint del artículo
dc.description.abstractA statistical model of the nonlinear response of silicon photomultipliers is presented. It includes losses of both the photodetection efficiency and the gain during pixel recovery periods as well as the effect of correlated and uncorrelated noise. The model provides either the mean output charge of a SiPM for incident light pulses of arbitrary shape or the output current for continuous light. The dependence of the SiPM response on both the overvoltage and the pulse shape is also properly described. The model has been validated for two different silicon photomultipliers using scintillation light pulses from a LYSO crystal as well as continuous light from a LED. Good agreement is found with experimental data at moderate nonlinearity.eng
dc.description.departmentDepto. de Estructura de la Materia, Física Térmica y Electrónica
dc.description.facultyFac. de Ciencias Físicas
dc.description.facultyInstituto de Física de Partículas y del Cosmos (IPARCOS)
dc.description.refereedTRUE
dc.description.sponsorshipMinisterio de Economía, Comercio y Empresa (España)
dc.description.statuspub
dc.identifier.citationRosado, J. (2019). Modeling the nonlinear response of silicon photomultipliers. IEEE Sensors Journal, 19(24), 12031-12039. https://doi.org/10.1109/JSEN.2019.2938018
dc.identifier.doi10.1109/JSEN.2019.2938018
dc.identifier.doi10.48550/arXiv.1905.06032
dc.identifier.essn1558-1748
dc.identifier.issn1530-437X
dc.identifier.officialurlhttps://doi.org/10.1109/JSEN.2019.2938018
dc.identifier.relatedurlhttps://doi.org/10.48550/arXiv.1905.06032
dc.identifier.relatedurlhttps://arxiv.org/abs/1905.06032
dc.identifier.urihttps://hdl.handle.net/20.500.14352/88577
dc.issue.number24
dc.journal.titleIEEE Sensors Journal
dc.language.isoeng
dc.page.final12039
dc.page.initial12031
dc.publisherInstitute of Electrical and Electronics Engineers
dc.relation.projectIDinfo:eu-repo/grantAgreement/AEI/Plan Estatal de Investigación Científica y Técnica y de Innovación 2013-2016/FPA2017-82729-C6-3-R
dc.rights.accessRightsopen access
dc.subject.cdu539.1
dc.subject.keywordSilicon photomultipliers
dc.subject.keywordSiPM
dc.subject.keywordNonlinearity
dc.subject.keywordstatistical model
dc.subject.ucmFísica nuclear
dc.subject.unesco2207 Física Atómica y Nuclear
dc.titleModeling the Nonlinear Response of Silicon Photomultipliersen
dc.typejournal article
dc.type.hasVersionAM
dc.volume.number19
dspace.entity.typePublication
relation.isAuthorOfPublication32033072-414c-4448-b44b-98a6bd3e9321
relation.isAuthorOfPublication.latestForDiscovery32033072-414c-4448-b44b-98a6bd3e9321

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