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Pulsed laser annealing of CdTe single crystals

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2000

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Natl Inst Optoelectronics
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Abstract

Pulsed laser treatments in air and in vacuum have been performed in CdTe wafers. The laser induced changes have been monitored by emissive mode and cathodoluminescence (CL) in a scanning electron microscope. Remarkable differences between the effects of both types of treatment have been found. In particular, while the irradiation in vacuum appears as a suitable technique for rapid annealing, irradiations in air can be accompanied by strong degradation of the sample surface.

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© Natl Inst Optoelectronics.

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