Influence of doping level on the cathodoluminescence of Se-doped GaSb crystals

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dc.contributor.authorDíaz-Guerra Viejo, Carlos
dc.contributor.authorVicent López, José Luis
dc.contributor.authorPiqueras de Noriega, Javier
dc.contributor.authorDieguez, E.
dc.date.accessioned2023-06-20T10:43:53Z
dc.date.available2023-06-20T10:43:53Z
dc.date.issued2007-01-07
dc.description© 2007 IOP Publishing Ltd. This work has been carried out in the framework of the Fifth Framework European Programme for research, Project HPRNCT 2001-00199. Support from MCYT through Projects MAT2003-00455 and MAT2003-09873-C02-01 as well as from UCM-CM (Group 910146) is also acknowledged.
dc.description.abstractThe influence of the doping level on the radiative recombination properties of GaSb:Se crystals has been investigated by cathodoluminescence (CL) microscopy and spectroscopy in the scanning electron microscope. CL images evidence a high dislocation density and dopant segregation around the dislocation cores in highly-doped crystals. A progressive reduction of the Se content leads to a lower dislocation density and a more uniform luminescence spatial distribution. CL spectra reveal the existence of three Se-related emission bands, centred in all the samples investigated at about 765, 740 and 719 meV, whose relative intensity is influenced by the doping level. Measurements carried out at different temperatures and excitation densities indicate that these bands can be attributed to transitions from the conduction band to deep acceptor levels.
dc.description.departmentDepto. de Física de Materiales
dc.description.facultyFac. de Ciencias Físicas
dc.description.refereedTRUE
dc.description.sponsorshipMCYT
dc.description.sponsorshipUCM-CM
dc.description.statuspub
dc.eprint.idhttps://eprints.ucm.es/id/eprint/25911
dc.identifier.citation[1] Dutta P S, Bhat H L and Kumar V 1997 J. Appl. Phys. 81 5821 and references therein [2] Mohseni H, Michel E, Sandoen J, Razeghi M, Mitchel W and Brown G 1997 Appl. Phys. Lett. 71 1403 [3] Bett A W and Sulima O V 2003 Semicond. Sci. Technol. 18 S184 [4] Iyer S, Small L, Hedge S M, Bajaj K K and Abul-Fadl A 1995 J. Appl. Phys. 77 5902 [5] Dutta P S, Méndez B, Piqueras J, Di´eguez E and Bhat H L 1996 J. Appl. Phys. 80 1112 [6] Díaz-Guerra C, Vincent J, Piqueras J, Bermúdez V and Díeguez E 2005 J. Appl. Phys. 97 023504 [7] Vincent J, Berm´udez V, Di´eguez E, Alves L C, Corregidor V and Barradas N P 2005 J. Cryst. Growth 275 e537 [8] Vincent J, Díaz-Guerra C, Piqueras J, Amariei A, Polychroniadis E K and Di´eguez E 2006 J. Cryst. Growth 289 18 [9] Shaw D A and Thorton P R 1968 J. Mater. Sci. 3 507 [10] Hidalgo P, Plaza J L, Méndez B, Di´eguez E and Piqueras J 2002 J. Phys.: Condens. Matter 14 13211 [11] Doerschel J 1994 Mat. Sci. Eng. B 28 142 [12] Pal U, Fernández P, Piqueras J, Sochinskii N V and Díeguez E 1995 J. Appl. Phys. 78 1992 [13] Wu M C and Chen C C 1992 J. Appl. Phys. 72 4275 [14] Dutta P S, Koteswara Rao K S, Sangunni K S, Bath H L and Kumar V 1994 Appl. Phys. Lett. 65 1412 [15] Kosicki B B and Paul W 1966 Phys. Rev. Lett. 17 246 [16] D’Olne Campos M, Gouskov A, Gouskov L and Pons J C 1970 Phys. Status. Solid. a 2 779 [17] Habbeger M A and Fan I Y 1965 Phys. Rev. 138 A598
dc.identifier.doi10.1088/0022-3727/40/1/005
dc.identifier.issn0022-3727
dc.identifier.officialurlhttp://dx.doi.org/10.1088/0022-3727/40/1/005
dc.identifier.relatedurlhttp://iopscience.iop.org
dc.identifier.urihttps://hdl.handle.net/20.500.14352/51097
dc.issue.number1
dc.journal.titleJournal of Physics D-Applied Physics
dc.language.isoeng
dc.page.final143
dc.page.initial137
dc.publisherIOP Publishing LTD
dc.relation.projectIDHPRNCT 2001-00199
dc.relation.projectIDMAT2003-00455
dc.relation.projectIDMAT2003-09873-C02-01
dc.relation.projectIDGroup 910146
dc.rights.accessRightsrestricted access
dc.subject.cdu538.9
dc.subject.keywordBulk Gasb
dc.subject.keywordPhotoluminescence
dc.subject.ucmFísica de materiales
dc.titleInfluence of doping level on the cathodoluminescence of Se-doped GaSb crystals
dc.typejournal article
dc.volume.number40
dspace.entity.typePublication
relation.isAuthorOfPublicationb1b44979-3a0d-45d7-aa26-a64b0dbfee18
relation.isAuthorOfPublicatione6727f44-0bf0-46be-9cea-e0b9b33e557b
relation.isAuthorOfPublication.latestForDiscoveryb1b44979-3a0d-45d7-aa26-a64b0dbfee18
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