Numerical study of electron-tunneling through heterostructures
| dc.contributor.author | Méndez Martín, María Bianchi | |
| dc.contributor.author | Domínguez-Adame Acosta, Francisco | |
| dc.date.accessioned | 2023-06-20T18:57:06Z | |
| dc.date.available | 2023-06-20T18:57:06Z | |
| dc.date.issued | 1994-02 | |
| dc.description | ©1994 American Association of physics Teachers | |
| dc.description.abstract | A numerical scheme based on the discretized form of the one-dimensional Schrodinger equation is presented. Using a transfer matrix method we recursively compute the transmission coefficient for electrons in arbitrary potentials. The computation time and storage are much reduced so that the code may be implemented by most programmable pocket calculators. The numerical method is used to study electron tunneling through single and double heterostructures, and the accuracy of the method is discussed. | |
| dc.description.department | Depto. de Física de Materiales | |
| dc.description.faculty | Fac. de Ciencias Físicas | |
| dc.description.refereed | TRUE | |
| dc.description.status | pub | |
| dc.eprint.id | https://eprints.ucm.es/id/eprint/24973 | |
| dc.identifier.issn | 0002-9505 | |
| dc.identifier.officialurl | http://ajp.aapt.org/resource/1/ajpias/v62/i2/p143_s1 | |
| dc.identifier.relatedurl | http://ajp.aapt.org | |
| dc.identifier.uri | https://hdl.handle.net/20.500.14352/58984 | |
| dc.issue.number | 2 | |
| dc.journal.title | American Journal of Physics | |
| dc.language.iso | eng | |
| dc.page.final | 147 | |
| dc.page.initial | 143 | |
| dc.publisher | Amer Inst Physics | |
| dc.rights.accessRights | restricted access | |
| dc.subject.cdu | 538.9 | |
| dc.subject.keyword | Education | |
| dc.subject.keyword | Scientific Disciplines | |
| dc.subject.keyword | Physics | |
| dc.subject.keyword | Multidisciplinary | |
| dc.subject.ucm | Física de materiales | |
| dc.title | Numerical study of electron-tunneling through heterostructures | |
| dc.type | journal article | |
| dc.volume.number | 62 | |
| dcterms.references | 1. J. Jaros, Physics Application of Semiconductor Microestructures (Clarendon, Oxfors, 1989), p. 190. 2. F. Capasso and R. A. Kiehl, “Resonant tunneling transistor with quantum wel base and high-energy injection:A negative differential resistance device,” J. Appl. Phys. 58 1366 (1985). 3. J. Hermans, D. L. Partin, P. D. Dresselhaus, and B. Lax, “Tuneling through narrow-gap semiconductor barriers” Appl. Lett. 48, 644-646 (1986). 4. R. Tsu and L. Esaki, “Tunneling in a finite superlattice,” Appl. Phys. Lett. 22, 265-564 (1973). 5. H. Cruz, A. Hernández-Cabrera, and A. Muñoz, “Resonant tunneling of electrons through parabolic quantum Wells: An analytical calculation of the transmission coefficient”, Semicond, Sci Technol. 6, 218-222 (1991). 6. B. Méndez, F. Domínguez-adame, and E. Maciá, “Atranfer matrix method for the determination of one-dimensionalband structures,” J. Phys. A. : Math. Gen. 26, 171-177 (1993). 7. F. Schwabl, Quantum Mechanics (Springer, New York, 1992), p. 56. | |
| dspace.entity.type | Publication | |
| relation.isAuthorOfPublication | 465cfd5b-6dd4-4a48-a6e3-160df06f7046 | |
| relation.isAuthorOfPublication | dbc02e39-958d-4885-acfb-131220e221ba | |
| relation.isAuthorOfPublication.latestForDiscovery | dbc02e39-958d-4885-acfb-131220e221ba |
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