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Spectrometric characterization of amorphous silicon PIN detectors

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dc.book.titleMedical physics
dc.contributor.authorLeyva, A.
dc.contributor.authorRamirez, F. J.
dc.contributor.authorOrtega Villafuerte, Yanicet
dc.contributor.authorEstrada, M.
dc.contributor.authorCabal, A.
dc.contributor.authorCerdeira, A.
dc.contributor.authorDíaz, A
dc.date.accessioned2023-06-20T21:13:45Z
dc.date.available2023-06-20T21:13:45Z
dc.date.issued2000
dc.description© Amer Inst Physics. Mexican Symposium on Medical Physics (4. 2000. Merida, Mejico). Authors would like to thank the Ionizing Radiation Metrology Laboratory of ININ for the use of his standards, X-ray units and installations. This work was supported by CONACYT project 28092A.
dc.description.abstractDuring the last years, much interest has been dedicated to the use of amorphous silicon PIN diodes as particle and radiation detectors for medical applications. This work presents the spectrometric characterization of PECVD high deposition rate diodes fabricated at our laboratory, with thickness up to 17.5 μm. Results show that the studied devices detect the Am^(241) alpha particles and the medical X-rays generated by a mammograph model Senographe 700T from General Electric. Possible reasons of the observed energy losses are discussed in the lest. Using the SRIM2000 program, the transit of 5.5 MeV alpha particles through a diode was simulated, determining the optimum thickness for these particles to deposit their energy in the intrinsic layer of the diode.
dc.description.departmentDepto. de Física de Materiales
dc.description.facultyFac. de Ciencias Físicas
dc.description.refereedTRUE
dc.description.sponsorshipCONACYT
dc.description.statuspub
dc.eprint.idhttps://eprints.ucm.es/id/eprint/45397
dc.identifier.isbn1-56396-963-7
dc.identifier.officialurlhttps://doi.org/10.1063/1.1328959
dc.identifier.relatedurlhttp://aip.scitation.org
dc.identifier.urihttps://hdl.handle.net/20.500.14352/61005
dc.issue.number538
dc.language.isoeng
dc.page.final205
dc.page.initial201
dc.page.total5
dc.publisherAmer Inst Physics
dc.relation.ispartofseriesAIP Conference Proceedings
dc.relation.projectID28092A
dc.rights.accessRightsopen access
dc.subject.cdu538.9
dc.subject.keywordEngineering
dc.subject.keywordbiomedical
dc.subject.keywordPhysics
dc.subject.keywordapplied
dc.subject.ucmFísica de materiales
dc.subject.ucmFísica del estado sólido
dc.subject.unesco2211 Física del Estado Sólido
dc.titleSpectrometric characterization of amorphous silicon PIN detectors
dc.typebook part
dspace.entity.typePublication
relation.isAuthorOfPublication2c56123a-d96e-428d-83ce-d134110a2ef3
relation.isAuthorOfPublication.latestForDiscovery2c56123a-d96e-428d-83ce-d134110a2ef3

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