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New details about the frequency behavior of irradiated bipolar operational amplifiers

dc.contributor.authorFranco Peláez, Francisco Javier
dc.contributor.authorZong, Yi
dc.contributor.authorAgapito Serrano, Juan Andrés
dc.date.accessioned2023-06-20T10:50:34Z
dc.date.available2023-06-20T10:50:34Z
dc.date.issued2006-08-28
dc.description(c) 2006 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other users, including reprinting/ republishing this material for advertising or promotional purposes, creating new collective works for resale or redistribution to servers or lists, or reuse of any copyrighted components of this work in other works
dc.description.abstractThe frequency behavior of a bipolar operational amplifier (op amp) is always expected to worsen when the device is irradiated. In other words, parameters like the slew rate and the gain-bandwidth product are to decrease after either neutron or gamma tests. However, some neutron and TID tests performed on a large variety of bipolar op amps have shown that the evolution of the frequency behavior is not as simple as it is usually believed. In fact, there is evidence of an increasing influence of the power supply values on the former parameters, which can be extremely important in some devices. Also, the relationship among different frequency parameters has been investigated and, finally, an interesting and scarcely reported phenomenon is depicted. This phenomenon is the appearance of spontaneous oscillations in fed-back op amps, without doubt related to the modification of the gain and phase margins of the devices
dc.description.departmentDepto. de Estructura de la Materia, Física Térmica y Electrónica
dc.description.facultyFac. de Ciencias Físicas
dc.description.refereedTRUE
dc.description.sponsorshipMinisterio de Educación y Ciencia
dc.description.sponsorshipCERN
dc.description.statuspub
dc.eprint.idhttps://eprints.ucm.es/id/eprint/28932
dc.identifier.doi10.1109/TNS.2006.880948
dc.identifier.issn0018-9499
dc.identifier.officialurlhttp://dx.doi.org/10.1109/TNS.2006.880948
dc.identifier.urihttps://hdl.handle.net/20.500.14352/51322
dc.issue.number4
dc.journal.titleIEEE transactions on nuclear science
dc.language.isoeng
dc.page.final1938
dc.page.initial1931
dc.publisherIEEE-Inst Electrical Electronics Engineers Inc
dc.relation.projectIDFPA2002-00912
dc.relation.projectIDK476/LHC
dc.rights.accessRightsopen access
dc.subject.cdu537.8
dc.subject.keywordBipolar integrated circuits
dc.subject.keywordGamma-ray effects
dc.subject.keywordNeutron effects
dc.subject.keywordOperational amplifiers
dc.subject.keywordOscillations
dc.subject.keywordBipolar operational amplifier irradiation
dc.subject.keywordFrequency behavior
dc.subject.keywordGain-bandwidth product
dc.subject.keywordGamma test
dc.subject.keywordNeutron test
dc.subject.keywordOscillation
dc.subject.keywordPower supply
dc.subject.keywordSlew rate
dc.subject.keywordDegradation
dc.subject.keywordFrequency
dc.subject.keywordInductors
dc.subject.keywordLarge Hadron Collider
dc.subject.keywordNeutrons
dc.subject.keywordPerformance evaluation
dc.subject.keywordPower supplies
dc.subject.keywordTesting
dc.subject.keywordVoltage
dc.subject.keywordBipolar technology
dc.subject.keywordNeutron irradiation
dc.subject.ucmElectrónica (Física)
dc.subject.ucmRadiactividad
dc.titleNew details about the frequency behavior of irradiated bipolar operational amplifiers
dc.typejournal article
dc.volume.number53
dspace.entity.typePublication
relation.isAuthorOfPublication662ba05f-c2fc-4ad7-9203-36924c80791a
relation.isAuthorOfPublication.latestForDiscovery662ba05f-c2fc-4ad7-9203-36924c80791a

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