Robust midgap states in band-inverted junctions under electric and magnetic fields

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dc.contributor.authorDíaz Fernández, Álvaro
dc.contributor.authordel Valle, Natalia
dc.contributor.authorDomínguez-Adame Acosta, Francisco
dc.date.accessioned2023-06-17T12:28:18Z
dc.date.available2023-06-17T12:28:18Z
dc.date.issued2018-03-14
dc.description© Beilstein-Institut. The authors thank L. Chico and J. W. González for helpful discussions. This work was supported by the Spanish MINECO under grant MAT2016-75955.
dc.description.abstractSeveral IV-VI semiconductor compounds made of heavy atoms, such as Pb1-xSnxTc, may undergo band-inversion at the L point of the Brillouin zone upon variation of their chemical composition. This inversion gives rise to topologically distinct phases, characterized by a change in a topological invariant. In the framework of the k.p theory, band-inversion can be viewed as a change of sign of the fundamental gap. A two-band model within the envelope-function approximation predicts the appearance of midgap interface states with Dirac cone dispersions in band-inverted junctions, namely, when the gap changes sign along the growth direction. We present a thorough study of these interface electron states in the presence of crossed electric and magnetic fields, the electric field being applied along the growth direction of a band-inverted junction. We show that the Dirac cone is robust and persists even if the fields are strong. In addition, we point out that Landau levels of electron states lying in the semiconductor bands can be tailored by the electric field. Tunable devices are thus likely to be realizable, exploiting the properties studied herein.
dc.description.departmentDepto. de Física de Materiales
dc.description.facultyFac. de Ciencias Físicas
dc.description.refereedTRUE
dc.description.sponsorshipMinisterio de Economía y Competitividad (MINECO)
dc.description.statuspub
dc.eprint.idhttps://eprints.ucm.es/id/eprint/48196
dc.identifier.doi10.3762/bjnano.9.133
dc.identifier.issn2190-4286
dc.identifier.officialurlhttp://dx.doi.org/10.3762/bjnano.9.133
dc.identifier.relatedurlhttps://www.beilstein-journals.org
dc.identifier.urihttps://hdl.handle.net/20.500.14352/12185
dc.journal.titleBeilstein journal of nanotechnology
dc.language.isoeng
dc.page.final1413
dc.page.initial1405
dc.publisherBeilstein-Institut
dc.relation.projectIDMAT2016-75955
dc.rightsAtribución 3.0 España
dc.rights.accessRightsopen access
dc.rights.urihttps://creativecommons.org/licenses/by/3.0/es/
dc.subject.cdu538.9
dc.subject.keywordTopological crystalline insulator
dc.subject.keywordHgte quantum-wells
dc.subject.keywordInterface states
dc.subject.keywordPhase-transition
dc.subject.keywordHeterojunctions
dc.subject.keywordPb1-Xsnxte
dc.subject.keywordGap
dc.subject.keywordSupersymmetry
dc.subject.keywordSpectroscopy
dc.subject.keywordContact
dc.subject.ucmFísica de materiales
dc.subject.ucmFísica del estado sólido
dc.subject.unesco2211 Física del Estado Sólido
dc.titleRobust midgap states in band-inverted junctions under electric and magnetic fields
dc.typejournal article
dc.volume.number9
dspace.entity.typePublication
relation.isAuthorOfPublication0622c92a-4fa0-4105-b6d0-e6dbb2d45ee0
relation.isAuthorOfPublicationdbc02e39-958d-4885-acfb-131220e221ba
relation.isAuthorOfPublication.latestForDiscovery0622c92a-4fa0-4105-b6d0-e6dbb2d45ee0
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