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Anomalous resistivity at the structural phase transition of polycrystalline SnTe

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dc.contributor.authorGrassie, Alexander D. C.
dc.contributor.authorAgapito Serrano, Juan Andrés
dc.contributor.authorGonzalez Espeso, Pablo
dc.date.accessioned2023-06-21T02:12:36Z
dc.date.available2023-06-21T02:12:36Z
dc.date.issued1979
dc.description@ 1979 The Institute of Physics
dc.description.abstractAn excess resistivity has been observed in thin film polycrystalline samples of SnTe with low carrier concentration and is attributed to the additional scattering due to the phonon softening associated with the structural phase transition.
dc.description.departmentDepto. de Estructura de la Materia, Física Térmica y Electrónica
dc.description.facultyFac. de Ciencias Físicas
dc.description.refereedTRUE
dc.description.sponsorshipBritish Council
dc.description.statuspub
dc.eprint.idhttps://eprints.ucm.es/id/eprint/40611
dc.identifier.issn0022-3719
dc.identifier.officialurlhttp://iopscience.iop.org/0022-3719/12/24/001
dc.identifier.relatedurlhttp://iopscience.iop.org
dc.identifier.urihttps://hdl.handle.net/20.500.14352/65103
dc.issue.number24
dc.journal.titleJournal of physics C: Solid state physics
dc.language.isoeng
dc.page.final927
dc.page.initial925
dc.publisherIOP Publishing
dc.rights.accessRightsopen access
dc.subject.cdu537
dc.subject.cdu621.38
dc.subject.cdu538.9
dc.subject.keywordResistivity
dc.subject.keywordSemiconductors
dc.subject.keywordSnTe
dc.subject.keywordTemperature dependence
dc.subject.ucmElectrónica (Física)
dc.subject.ucmFísica de materiales
dc.titleAnomalous resistivity at the structural phase transition of polycrystalline SnTe
dc.typejournal article
dc.volume.number12
dcterms.references[1] Hatta I and Kobayashi K L I 1977 Solid St. Commun. 22 775 [2] Hatta I and Rehwald W 1977 J. Phys. C: Solid St. Phys. 10 2075 [3] Iizumi M, Hamaguchi Y, Komatsubara K F and Kato Y 1975 J. Phys. Soc. Japan 38 443 [4] Katayama Y 1976 Solid St. Commun. 19 381 [5] Kawamura H 1979 Proc. Int. Summer School on Narrow Gap Semiconductors, Nimes to be published [6] Kobayashi K L I, Kato Y, Katayama Y and Komatsubara K F 1975 Solid St. Commun. 17 875 [7] Murase K, Sugai S, Higuchi T, Takaoka S, Fukunaga T and Kawamura H 1978 Physics of Semiconductors 1978: Inst. Phys. Conf. Ser. 43 p 437 [8] Novikova S I and Shelimova L E 1966 Sov. Phys. - Solid St. 7 2052 [9] Pawley G S, Cochran W, Cowley R A and Dolling G 1966 Phys. Rev. Lett. 17 753 [10] Todoroki S and Onuma Y 1974 J. Vac. Soc. Japan 17 438
dspace.entity.typePublication

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