Aviso: para depositar documentos, por favor, inicia sesión e identifícate con tu cuenta de correo institucional de la UCM con el botón MI CUENTA UCM. No emplees la opción AUTENTICACIÓN CON CONTRASEÑA
 

Porosity-induced gain of luminescence in CdSe

Simple item page
dc.contributor.authorMonaico, E.
dc.contributor.authorUrsaki, V. V.
dc.contributor.authorUrbieta Quiroga, Ana Irene
dc.contributor.authorFernández Sánchez, Paloma
dc.contributor.authorPiqueras De Noriega, Francisco Javier
dc.contributor.authorBoyd, R. W.
dc.contributor.authorTiginyanu, I. M.
dc.date.accessioned2023-06-20T10:45:00Z
dc.date.available2023-06-20T10:45:00Z
dc.date.issued2004-12
dc.description© 2004 IOP Publishing Ltd Printed in the UK. This work was supported by US Civilian Research and Development Foundation under grant nos ME2-2527 and MR2-995, MCYT under grant no MAT2003-00455 and Supreme Council for Research and Technological Development of Moldova under grant no 4-031P.
dc.description.abstractPorous CdSe layers have been produced by anodic etching of crystalline substrates in a HCl solution. Anodization under in situ. UV illumination resulted in the formation of uniformly distributed parallel pores with a diameter of 30 nm, stretching perpendicularly to the initial surface. At the same time, pronounced nonuniformities in the spatial distribution of pores were evidenced in samples subjected to anodic etching in the dark. Gain of luminescence was observed in some porous regions and attributed to the formation of ring microcavities for light in the porous network.
dc.description.departmentDepto. de Física de Materiales
dc.description.facultyFac. de Ciencias Físicas
dc.description.refereedTRUE
dc.description.sponsorshipUS Civilian Research and Development Foundation
dc.description.sponsorshipMCYT
dc.description.sponsorshipSupreme Council for Research and Technological Development of Moldova
dc.description.statuspub
dc.eprint.idhttps://eprints.ucm.es/id/eprint/26173
dc.identifier.doi10.1088/0268-1242/19/12/L04
dc.identifier.issn0268-1242
dc.identifier.officialurlhttp://dx.doi.org/10.1088/0268-1242/19/12/L04
dc.identifier.relatedurlhttp://iopscience.iop.org
dc.identifier.urihttps://hdl.handle.net/20.500.14352/51141
dc.issue.number12
dc.journal.titleSemiconductor Science and Technology
dc.language.isoeng
dc.page.finalL123
dc.page.initialL121
dc.publisherIOP Publishing Ltd
dc.relation.projectIDME2-2527
dc.relation.projectIDMR2-995
dc.relation.projectIDMAT2003-00455
dc.relation.projectID4-031P
dc.rights.accessRightsopen access
dc.subject.cdu538.9
dc.subject.keywordNonlinear-Optical Materials
dc.subject.keywordPhotoluminescence
dc.subject.ucmFísica de materiales
dc.titlePorosity-induced gain of luminescence in CdSe
dc.typejournal article
dc.volume.number19
dcterms.references[1] Föll H, Langa S, Carstensen J, Christophersen M. and Tiginyanu I M 2003 Adv. Mater. 15 183 [2] Tiginyanu I M, Kravetsky I V, Monecke J, Cordts W, Marowsky G and Hartnagel H L 2000 Appl. Phys. Lett. 77 2415 [3] Tiginyanu I M, Kravetsky I V, Langa S, Marowsky G, Monecke J and Föll H 2003 Phys. Status Solidi a 197 549 [4] Reid M, Cravetchi I V, Fedosejevs R, Tiginyanu I M and Sirbu L 2004 Appl. Phys. Lett. [5] Stevens-Kalceff M A, Tiginyanu I M, Langa S, Föll H and Hartnagel H L 2001 J. Appl. Phys. 89 2560 [6] Garuthara R, Tomkiewicz M and Tenne R 1985 Phys. Rev. B 31 7844 [7] Erné B H, Million A, Vigneron J, Mathieu C, Debiemme-Chouvy C and Etcheberry A 1999 Electrochem. Solid-State Lett. 2 619 [8] Erné B H, Mathieu C, Vigneron J, Million A and Etcheberry A 2000 J. Electrochem. Soc. 147 3759 [9] Zenia F, Levy-Clement C, Triboulet R, Knenkamp R, Ernst K, Saad M and Lux-Steiner M C 1999 Appl. Phys. Lett. 75 531 [10] Langa S, Tiginyanu I M, Carstensen J, Christophersen M and Föll H 2003 Appl. Phys. Lett. 82 278 [11] Cao H, Zhao Y G, Ho S T, Seelig E W, Wang Q H and Chang R P H 1999 Phys. Rev. Lett. 82 2278 [12] Chen Y L, Chen C C, Jeng J C and Chen Y F 2004 Appl. Phys. Lett. 85 1259 [13] Jäger-Waldau R, Stücheli N, Braun M, Lux Steiner M, Bucher E, Tenne R, Flaisher H, Kerfin W, Braun R and Koschel W 1988 J. Appl. Phys. 64 2601
dspace.entity.typePublication
relation.isAuthorOfPublicationf8df9b48-67a9-4518-9c37-a6bd1b37c150
relation.isAuthorOfPublicationdaf4b879-c4a8-4121-aaff-e6ba47195545
relation.isAuthorOfPublication68dabfe9-5aec-4207-bf8a-0851f2e37e2c
relation.isAuthorOfPublication.latestForDiscoveryf8df9b48-67a9-4518-9c37-a6bd1b37c150

Download

Original bundle

Now showing 1 - 1 of 1
Thumbnail Image
Name:
PiquerasJ106.pdf
Size:
224.8 KB
Format:
Adobe Portable Document Format
downoload Download

Collections

Artículos