Aviso: para depositar documentos, por favor, inicia sesión e identifícate con tu cuenta de correo institucional de la UCM con el botón MI CUENTA UCM. No emplees la opción AUTENTICACIÓN CON CONTRASEÑA
 

Study of thermal treated a-Si implanted with Er and O ions

Simple item page
dc.contributor.authorPlugaru, R.
dc.contributor.authorMéndez Martín, María Bianchi
dc.contributor.authorPiqueras De Noriega, Francisco Javier
dc.contributor.authorTate, T.J.
dc.date.accessioned2023-06-20T18:55:02Z
dc.date.available2023-06-20T18:55:02Z
dc.date.issued2002-12-16
dc.description© 2002 IOP Publishing Ltd. This work has been supported byMCYT (ProjectMAT2000-2119). RP acknowledgesMECD for the research grant SB2000-0164. Conference on Extended Defects in Semiconductors (EDS 2002)(2002. Bologna, Italia)
dc.description.abstractVisible luminescence of amorphous silicon layers either implanted with Er or co-implanted with Er and O and subsequently annealed in nitrogen has been investigated by cathodoluminescence (CL) in a scanning electron microscope. Co-implanted samples show a more intense luminescence, which is revealed by annealing at lower temperatures than the samples implanted only with erbium. Thermal treatments cause the formation of erbium oxide as well as Er-Si complexes or precipitates. Violet-blue luminescence has been found from CL images and spectra to be related to Er-Si precipitates. Emission in the green-red range is attributed to oxide species.
dc.description.departmentDepto. de Física de Materiales
dc.description.facultyFac. de Ciencias Físicas
dc.description.refereedTRUE
dc.description.sponsorshipMCYT
dc.description.sponsorshipMECD
dc.description.statuspub
dc.eprint.idhttps://eprints.ucm.es/id/eprint/24419
dc.identifier.doi10.1088/0953-8984/14/48/363
dc.identifier.issn0953-8984
dc.identifier.officialurlhttp://iopscience.iop.org/0953-8984/14/48/363
dc.identifier.relatedurlhttp://iopscience.iop.org
dc.identifier.urihttps://hdl.handle.net/20.500.14352/58919
dc.issue.number48
dc.journal.titleJournal of Physics: Condensed Mater
dc.language.isoeng
dc.page.final13159
dc.page.initial13153
dc.publisherInstitute of Physics
dc.relation.projectIDMAT 2000-2119
dc.relation.projectIDSB2000-0164
dc.rights.accessRightsopen access
dc.subject.cdu538.9
dc.subject.keywordErbium Luminescence
dc.subject.keywordAmorphous-Silicon
dc.subject.keywordCrystal Silicon
dc.subject.keywordPorous Silicon
dc.subject.keywordExcitation
dc.subject.keywordCathodoluminescence
dc.subject.keywordPhotoluminescence
dc.subject.keywordFilms
dc.subject.keywordSegregation
dc.subject.keywordEpitaxy
dc.subject.ucmFísica de materiales
dc.titleStudy of thermal treated a-Si implanted with Er and O ions
dc.typejournal article
dc.volume.number14
dcterms.references[1] Custer J S, Polman A and van Pinxteren H M 1994 J. Appl. Phys. 75 2809 [2] Polman A, van den Hoven G N, Custer J S, Serna R and Alkemade P F A 1995 J. Appl. Phys. 77 1256 [3] Priolo F, Franz´o G, Coffa S and Carnera A 1998 Phys. Rev. B 57 4443 [4] van den Hove G N, Shin J H, Polman A, Lombardo S and Campisano S U 1995 J. Appl. Phys. 78 2642 [5] Zanatta A R, Nunes L A O and Tessler L R 1997 Appl. Phys. Lett. 70 511 [6] Fuhs W, Ulber I, Weiser G, Bresler M S, Gusev O B, Kuznetsov A N, Kudoyarova V Kh, Terukov E I and Yassievich I N 1997 Phys. Rev. B 56 9545 [7] Dorofeev A M, Gaponenko N V, Bondarenko V P, Bachilo E E, Kazuchits N M, Leshok A A, Troyanova G N, Vorosov N N, Borisenko V E, Gnaser H, Bock V, Becker P and Oechsner H 1995 J. Appl. Phys. 77 2679 [8] Michel J, Benton J L, Ferrante R F, Jacobson D C, Eaglesham D J, Fitzgerald E A, Xie Y H, Poate J M and Kimerling L C 1991 J. Appl. Phys. 70 2672 [9] Polman A 1997 J. Appl. Phys. 82 1 [10] Fujii M, Yoshida M, Hayashi S and Yamamoto K 1998 J. Appl. Phys. 84 4525 [11] Citrin P H, Northrup P A, Birkhahan R and Steckl A J 2000 Appl. Phys. Lett. 76 2865 [12] Kasuya A and Suezawa M 1997 Appl. Phys. Lett. 71 2728 [13] Przybylinska H, Jantsch W, Suprun-Belevitch Yu, Stepikhova M, Palmetshofer L, Hendorfer G, Kozanecki A, Wilson R J and Sealy B J 1996 Phys. Rev. B 54 2532 [14] Suezawa M and Sumino K 1994 Japan. J. Appl. Phys. 33 L1782 [15] Terrasi A, Franzó G, Coffa S, Priolo F, D´Acapito F and Mobilio S 1997 Appl. Phys. Lett. 70 1712 [16] Nogales E, Méndez B, Piqueras J, Plugaru R, Coraci A and García J A 2002 J. Phys. D: Appl. Phys. 35 295 [17] Nogales E, Méndez B, Piqueras J, Plugaru R, García J A and Tate T J 2002 Mater. Res. Soc. Symp. Proc. 692 H9.14.1 [18] Piqueras J, Méndez B, Plugaru R, Craciun G, García J A and Remón A 1999 Appl. Phys. A 68 329 [19] Plugaru R, Craciun G, Nastase N, Méndez B, Cremades A, Piqueras J and Nogales E 2000 J. Porous Mater. 7 291 [20] Serna R, Lohmeier M, Zagwijn P M, Vlieg E and Polman A 1995 Appl. Phys. Lett. 66 1385 [21] Lozykowski H J, Jadwisienczak W M and Brown I 1999 Appl. Phys. Lett. 74 1129
dspace.entity.typePublication
relation.isAuthorOfPublication465cfd5b-6dd4-4a48-a6e3-160df06f7046
relation.isAuthorOfPublication68dabfe9-5aec-4207-bf8a-0851f2e37e2c
relation.isAuthorOfPublication.latestForDiscovery465cfd5b-6dd4-4a48-a6e3-160df06f7046

Download

Original bundle

Now showing 1 - 1 of 1
Thumbnail Image
Name:
MendezBianchi33.pdf
Size:
217.29 KB
Format:
Adobe Portable Document Format
downoload Download

Collections

Artículos