Sub-bandgap absorption in Ti implanted Si over the Mott limit

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dc.contributor.authorMartil De La Plaza, Ignacio
dc.contributor.authorGonzález Díaz, Germán
dc.contributor.authorOlea Ariza, Javier
dc.contributor.authorPrado Millán, Álvaro Del
dc.date.accessioned2023-06-20T03:40:59Z
dc.date.available2023-06-20T03:40:59Z
dc.date.issued2011-06-01
dc.description© 2011 American Institute of Physics. The authors would like to acknowledge the Nanotechnology and Surface Analysis Services of the Universidad de Vigo C.A.C.T.I. for ToF-SIMS measurements, C.A.I.s de Técnicas Físicas and spectroscopía of the Universidad Complutense de Madrid for ion implantation experiments and FTIR measurement facilities and Dr. J. Herrero (CIEMAT) for UV-VIS-IR measurements facilities. This work was partially supported by the Projects GENESIS-FV (Grant No. CSD2006-0004) funded by the Spanish Consolider National Programme, NUMANCIA II (Grant No. S-2009/ENE-1477) funded by the Regional Government of Comunidad de Madrid.
dc.description.abstractWe have analyzed the structural and optical properties of Si implanted with very high Ti doses and subsequently pulsed-laser melted (PLM). After PLM, all samples exhibit an abrupt and roughly uniform, box-shaped Ti profile, with a concentration around 2 x 10(20) cm(-3), which is well above the Mott limit, within a 150 nm thick layer. Samples PLM-annealed at the highest energy density (1.8 J/cm(2)) exhibit good lattice reconstruction. Independent of the annealing energy density, in all of the samples we observe strong sub-bandgap absorption, with absorption coefficient values between 4 x 10(3) and 10(4) cm(-1). These results are explained in terms of the formation of an intermediate band (IB) originated from the Ti deep levels.
dc.description.departmentDepto. de Estructura de la Materia, Física Térmica y Electrónica
dc.description.facultyFac. de Ciencias Físicas
dc.description.refereedTRUE
dc.description.sponsorshipComunidad de Madrid
dc.description.sponsorshipSpanish Consolider National Programme
dc.description.statuspub
dc.eprint.idhttps://eprints.ucm.es/id/eprint/25844
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dc.identifier.doi10.1063/1.3596525
dc.identifier.issn0021-8979
dc.identifier.officialurlhttp://dx.doi.org/10.1063/1.3596525
dc.identifier.relatedurlhttp://scitation.aip.org
dc.identifier.urihttps://hdl.handle.net/20.500.14352/44237
dc.issue.number11
dc.journal.titleJournal of Applied Physics
dc.language.isoeng
dc.publisherAmerican Institute of Physics
dc.relation.projectIDNUMANCIA II (S2009/ENE-1477)
dc.relation.projectID(GENESIS-FV-CSD2006-0004)
dc.rights.accessRightsopen access
dc.subject.cdu537
dc.subject.keywordFree Carrier Absorption
dc.subject.keywordInfrared-Absorption
dc.subject.keywordSilicon Layers
dc.subject.keywordTitanium.
dc.subject.ucmElectricidad
dc.subject.ucmElectrónica (Física)
dc.subject.unesco2202.03 Electricidad
dc.titleSub-bandgap absorption in Ti implanted Si over the Mott limit
dc.typejournal article
dc.volume.number109
dspace.entity.typePublication
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relation.isAuthorOfPublication.latestForDiscoverya5ab602d-705f-4080-b4eb-53772168a203
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