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High-quality Si-implanted In0.53Ga0.47As epitaxial layers and their application to n(+)p junction devices

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dc.contributor.authorMartil De La Plaza, Ignacio
dc.contributor.authorGonzález Díaz, Germán
dc.date.accessioned2023-06-20T19:05:28Z
dc.date.available2023-06-20T19:05:28Z
dc.date.issued2000-04-01
dc.description© American Institute of Physics. The authors would like to thank CAI de Implantación Iónica from the Complutense University in Madrid for assistance with ion implantation. This work was partially supported by the Spanish CICYT under Grant No. TIC 98/0740.
dc.description.abstractSi implantations into undoped In0.53Ga0.47As have been carried out to obtain n-layers suitable for device applications. Different doses and energies have been analyzed. After rapid thermal annealing at 850-875 degrees C for 10-20 s, electrical activations of about 100%, and mobilities as high as 4000 cm(2)/V s were obtained. Different Hall measurements show that there is no redistribution of the dopants. Photoluminescence measurements demonstrate the satisfactory recrystallization of the lattice and the excellent activation of the dopants. Electrical characteristics of n(+)p junctions made by Si implantation into Zn-doped In0.53Ga0.47As are described. Junction behavior at forward bias could be explained by recombination in the space-charge zone mechanisms, whereas different tunneling processes dominate at reverse bias. (C) 2000 American Institute of Physics. [S0021-8979(00)01807-7].
dc.description.departmentDepto. de Estructura de la Materia, Física Térmica y Electrónica
dc.description.facultyFac. de Ciencias Físicas
dc.description.refereedTRUE
dc.description.sponsorshipSpanish CICYT
dc.description.statuspub
dc.eprint.idhttps://eprints.ucm.es/id/eprint/26798
dc.identifier.doi10.1063/1.372369
dc.identifier.issn0021-8979
dc.identifier.officialurlhttp://dx.doi.org/10.1063/1.372369
dc.identifier.relatedurlhttp://scitation.aip.org
dc.identifier.urihttps://hdl.handle.net/20.500.14352/59233
dc.issue.number7
dc.journal.titleJournal of Applied Physics
dc.language.isoeng
dc.page.final3482
dc.page.initial3478
dc.publisherAmerican Institute of Physics
dc.relation.projectIDTIC 98/0740
dc.rights.accessRightsopen access
dc.subject.cdu537
dc.subject.keywordInGaAs
dc.subject.keywordInP
dc.subject.keywordLuminescence
dc.subject.keywordPhotodiode.
dc.subject.ucmElectricidad
dc.subject.ucmElectrónica (Física)
dc.subject.unesco2202.03 Electricidad
dc.titleHigh-quality Si-implanted In0.53Ga0.47As epitaxial layers and their application to n(+)p junction devices
dc.typejournal article
dc.volume.number87
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