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Effect of sintering conditions on microstructure and dielectric properties of CaCu3Ti4O12 (CCTO) ceramics

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dc.contributor.authorLöhnert, Romy
dc.contributor.authorSchmidt, Rainer
dc.contributor.authorTöpfer, Jörg
dc.date.accessioned2023-06-18T06:49:28Z
dc.date.available2023-06-18T06:49:28Z
dc.date.issued2015-06
dc.description© Springer International Publishing AG. This work was supported by the State of Thuringia, Germany, through a grant in the ProExzellenz network (Kerfunmat, PE214). R.S. wishes to acknowledge a Ramón y Cajal fellowship from the MICINN/MINECO (Spain).
dc.description.abstractThe influence of sintering temperature and dwell time on the microstructure formation and dielectric properties of CaCu_(3)Ti_(4)O_(12) ceramics was investigated. For sintering temperatures of 1050 and 1100 °C significant differences in the CaCu_(3)Ti_(4)O_(12) ceramic microstructure and the segregation of a CuO_(x)-rich phase towards the grain boundary (GB) areas were observed with increasing dwell time. In addition to the formation of a semiconducting bulk and insulating grain boundary phase the segregated CuO_(x) forms an intergranular phase, and the effects of this phase on the dielectric properties are rather intriguing. At sintering temperature below 1050 °C only small amounts of CuO_(x) segregate, whereas sintering above 1050 °C (e.g., 1100 °C) leads to increased evaporation of the CuO_(x). Therefore, the effects of the CuOx-rich intergranular phase upon the dielectric properties are felt strongest in samples sintered at 1050 °C. Such effects are discussed in terms of microstructural variations due to liquid phase sintering behavior facilitated by the TiO_(2)-CuO_(x)-eutectic, which appearsto be melted at high sintering temperature prior to evaporation of CuO_(x) at prolonged dwell times at the highest sintering temperatures(1100 °C).
dc.description.departmentDepto. de Estructura de la Materia, Física Térmica y Electrónica
dc.description.facultyFac. de Ciencias Físicas
dc.description.refereedTRUE
dc.description.sponsorshipState of Thuringia, Germany
dc.description.sponsorshipMICINN/MINECO (Spain)
dc.description.statuspub
dc.eprint.idhttps://eprints.ucm.es/id/eprint/35318
dc.identifier.doi10.1007/s10832-015-9982-0
dc.identifier.issn1385-3449
dc.identifier.officialurlhttp://dx.doi.org/10.1007/s10832-015-9982-0
dc.identifier.relatedurlhttp://link.springer.com/
dc.identifier.urihttps://hdl.handle.net/20.500.14352/24315
dc.issue.number4
dc.journal.titleJournal of electroceramics
dc.language.isoeng
dc.page.final248
dc.page.initial241
dc.publisherSpringer
dc.relation.projectIDKerfunmat, PE214
dc.relation.projectIDRamón y Cajal
dc.rights.accessRightsopen access
dc.subject.cdu537
dc.subject.keywordBarrier layer capacitor
dc.subject.keywordConstant
dc.subject.keywordClues.
dc.subject.ucmElectricidad
dc.subject.ucmElectrónica (Física)
dc.subject.unesco2202.03 Electricidad
dc.titleEffect of sintering conditions on microstructure and dielectric properties of CaCu3Ti4O12 (CCTO) ceramics
dc.typejournal article
dc.volume.number34
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relation.isAuthorOfPublication.latestForDiscovery4d468566-fa66-4e1c-8463-382517edca6e

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