Ion Implantation and Pulsed Laser Melting Processing for the Development of an Intermediate Band Material
| dc.book.title | Ion Implantation Technology | |
| dc.contributor.author | Martil De La Plaza, Ignacio | |
| dc.contributor.author | García Hemme, Eric | |
| dc.contributor.author | García Hernansanz, Rodrigo | |
| dc.contributor.author | González Díaz, Germán | |
| dc.contributor.author | Olea Ariza, Javier | |
| dc.contributor.author | Prado Millán, Álvaro Del | |
| dc.date.accessioned | 2023-06-20T05:46:15Z | |
| dc.date.available | 2023-06-20T05:46:15Z | |
| dc.date.issued | 2012 | |
| dc.description | International Conference on Ion Implantation Technology ( 19.2012.Valladolid, España). © 2012 American Institute of Physics. Authors would like to acknowledge the CAI de Técnicas Físicas of the Universidad Complutense de Madrid for the ion implantations and metallic evaporations and the Nanotechnology and Surface Analysis Services of the Universidad de Vigo C.A.C.T.I. for ToF-SIMS measurements. This work was partially supported by the Project NUMANCIA II (Grant No. S-2009/ENE/1477) funded by the Comunidad de Madrid. Research by E. García-Hemme, was also supported by a PICATA predoctoral fellowship of the Moncloa Campus of International Excellence (UCM-UPM). J. Olea and D. Pastor thanks Prof. A. Martí and Prof. A. Luque for useful discussions and guidance and acknowledge financial support from the MICINN within the program Juan de la Cierva (JCI-2011-10402 and JCI-2011-11471), under which this research was undertaken. | |
| dc.description.abstract | Ti supersaturated Si layers with two different thicknesses have been obtained on the top of a Si substrate by means of ion implantation and pulsed laser melting processes. Time-of-flight Secondary Ion Mass spectrometry (ToF-SIMS) measurements show Ti concentration above the intermediate band formation limit. This feature has been obtained in 20 nm for one of the set of samples and in 120 nm in the other one. Sheet resistance measurements at variable temperature show an unusual electrical decoupling between the Ti implanted layer and the n-Si substrate in the two sets of samples. This behavior has been successfully explained using the intermediate band theory. These results points out that we have achieved thicker layers of intermediate band material. | |
| dc.description.department | Depto. de Estructura de la Materia, Física Térmica y Electrónica | |
| dc.description.faculty | Fac. de Ciencias Físicas | |
| dc.description.refereed | TRUE | |
| dc.description.sponsorship | Comunidad de Madrid | |
| dc.description.sponsorship | MICINN | |
| dc.description.status | pub | |
| dc.eprint.id | https://eprints.ucm.es/id/eprint/25815 | |
| dc.identifier.doi | 10.1063/1.4766488 | |
| dc.identifier.officialurl | http://dx.doi.org/10.1063/1.4766488 | |
| dc.identifier.relatedurl | http://scitation.aip.org | |
| dc.identifier.uri | https://hdl.handle.net/20.500.14352/45520 | |
| dc.language.iso | eng | |
| dc.page.final | 57 | |
| dc.page.initial | 54 | |
| dc.publisher | American Institute of Physics | |
| dc.relation.projectID | NUMANCIA II (S2009/ENE-1477) | |
| dc.relation.projectID | (JCI-2011-10402) | |
| dc.relation.projectID | (JCI-2011-11471) | |
| dc.rights.accessRights | open access | |
| dc.subject.cdu | 537 | |
| dc.subject.keyword | Silicon | |
| dc.subject.keyword | Alloys. | |
| dc.subject.ucm | Electricidad | |
| dc.subject.ucm | Electrónica (Física) | |
| dc.subject.unesco | 2202.03 Electricidad | |
| dc.title | Ion Implantation and Pulsed Laser Melting Processing for the Development of an Intermediate Band Material | |
| dc.type | book part | |
| dc.volume.number | 1496 | |
| dcterms.references | 1) A. Luque and A. Martí, Phys. Rev. Lett. 78 (26), 5014-5017 (1997). 2) A. Martí, et al., Thin Solid Films 511, 638-644 (2006). 3) J. Wu, W. Shan and W. Walukiewicz, Semicond. Sci. Tech. 17 (8), 860-869 (2002). 4) E. Antolín, et al., Appl. Phys. Lett. 94 (4), 042115 (2009). 5) A. Luque, et al., Phys. B-Cond. Matter 382 (1-2), 320-327(2006). 6) K. Sánchez, et al., Phys. Rev. B 79 (16), 165203 (2009). 7) S. Hocine and D. Mathiot, Appl. Phys. Lett. 53 (14), 1269-1271 (1988). 8) C. W. White, et al., J. Appl. Phys. 51 (1), 738-749(1980). 9) J. Olea, et al., J. Appl. Phys. 104 (1), 016105 (2008). 10) J. Olea, et al., J. Appl. Phys. 109 (11), 113541 (2011). 11) J. Olea, et al., J. Appl. Phys. 107 (10), 103524 (2010). 12) D. Pastor, et al., Semicond. Sci. Tech. 26 (11) (2011). 13) J. Olea, et al., J. Appl. Phys. 109 (6), 8 (2011). | |
| dspace.entity.type | Publication | |
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