C-V, DLTS and conductance transient characterization of SiNx:H/InP interface improved by N-2 remote plasma cleaning of the InP surface

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dc.contributor.authorMartil De La Plaza, Ignacio
dc.contributor.authorGonzález Díaz, Germán
dc.date.accessioned2023-06-20T19:01:10Z
dc.date.available2023-06-20T19:01:10Z
dc.date.issued2001-06
dc.descriptionInternational Conference on Materials in Microelectronics (3. 2000. Dublin, Irlanda). © 2001 Kluwer Academix Publishers. The authors would like to thank C.A.I. de Implantación Iónica from the Complutense University in Madrid for technical assitance with the ECR-CVD system. This research wasa partially supported by the Spanish DGESIC under Grants No. TIC 1FD97-2085 and TIC 98/0740.
dc.description.abstractElectrical characterization of Al/SiNx:H/InP structures shows that ECR nitrogen plasma cleaning of InP surfaces gives rise to a noticeable improvement in the interface quality, whereas insulator and semiconductor bulk properties are maintained at a level sufficient to be used as the gate dielectric in MIS devices. Nitrogen plasma exposure was carried out just before the SiNx plasma deposition without vacuum breaking. To obtain interface state density and to detect deep levels in the semiconductor bulk, deep level transient spectroscopy (DLTS) measurements were carried out. We have also evaluated the insulator damage density, the so-called disorder-induced gap states (DIGS), by means of conductance transient analysis. Our results show that the plasma exposure in N-2 atmospheres is a valuable and simple surface conditioning method.
dc.description.departmentDepto. de Estructura de la Materia, Física Térmica y Electrónica
dc.description.facultyFac. de Ciencias Físicas
dc.description.refereedTRUE
dc.description.sponsorshipSpanish DGESIC
dc.description.statuspub
dc.eprint.idhttps://eprints.ucm.es/id/eprint/26291
dc.identifier.citation1) A. Kapila, X. Si and V. Malhora, Appl. Phys. Lett., 62 (1993) 2259. 2) E. Redondo, N. Blanco, I. Mártil, G. González-Díaz, R. Peláez, S. Dueñas and H. Castán, J. Vac. Sci. Technol. A, 17 (1999) 2178. 3) E. Redondo, N. Blanco, I.Mártil and G. González-Díaz, Appl. Phys. Lett., 74 (1999) 991. 4) H. castán, S. Dueñas, J. Barbolla, E. Redondo, N. Blanco, I. Mártil and G. Conzález-Díaz, Microelectron Reliab, 40 (2000) 845. 5) S. García, I.Mártil, G. González-Díaz and M. Fernández, Semicond. Sci. Technol., 12 (1997) 1650. 6) L. He, H. Hasegawa, T. Sawada and H. Ohno, J. Appl. Phys., 63 (1988) 2120. 7) E.H. Nicollian and J.R. Brews, "MOS Physics and Technology", (Wiley, New York, 1982). 8) T. Hashizume, H. Hasegawa, R. Riemenschneider and H.L. Hartnagel, Jpn. J. Appl. Phys., 33 (1994) 727. 9) S. Dueñas, R. Peláez, H. Castán, R. Pinacho, L. Quintanilla, J. Barbolla, I. Mártil and G. González-Díaz, Appl. Phys.Lett., 71 (1997) 826. 10) M. Losurdo, P. Capezzuto, G. Bruno, G. Leo and E.A. Irene, J. Vac. Sci. Technol. A, 17 (1999) 2194. 11) T. Hashizume, Appl. Phys. Lett., 75 (1999) 615. 12) E. Redondo, I. Mártil, G. González-Díaz, H. Castán and S. Dueñas, submitted to J. Vac. Sci. Technol. 13) R. Peláez, H. Castán, S. Dueñas, J. Barbolla, E. Redondo, I. Mártil and G. González-Díaz, J. Appl. Phys., 86 (1999) 6924.
dc.identifier.doi10.1023/A:1011219622378
dc.identifier.issn0957-4522
dc.identifier.officialurlhttp://dx.doi.org/10.1023/A:1011219622378
dc.identifier.relatedurlhttp://link.springer.com
dc.identifier.urihttps://hdl.handle.net/20.500.14352/59115
dc.issue.number4-6
dc.journal.titleJournal of Materials Science: Materials in Electronics
dc.language.isoeng
dc.page.final267
dc.page.initial263
dc.publisherKluwer Academic Publ.
dc.relation.projectIDTIC 1FD97-2085
dc.relation.projectIDTIC 98/0740
dc.rights.accessRightsopen access
dc.subject.cdu537
dc.subject.keywordInsulator-Semiconductor Structures
dc.subject.keywordAl/SiNx:H/InP
dc.subject.keywordDevices
dc.subject.keywordNitridation.
dc.subject.ucmElectricidad
dc.subject.ucmElectrónica (Física)
dc.subject.unesco2202.03 Electricidad
dc.titleC-V, DLTS and conductance transient characterization of SiNx:H/InP interface improved by N-2 remote plasma cleaning of the InP surface
dc.typejournal article
dc.volume.number12
dspace.entity.typePublication
relation.isAuthorOfPublication6db57595-2258-46f1-9cff-ed8287511c84
relation.isAuthorOfPublicationa5ab602d-705f-4080-b4eb-53772168a203
relation.isAuthorOfPublication.latestForDiscoverya5ab602d-705f-4080-b4eb-53772168a203
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