Cathodoluminescence and positron-annihilation study of defect distribution in III-V wafers

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dc.contributor.authorDomínguez-Adame Acosta, Francisco
dc.contributor.authorMéndez Martín, Bianchi
dc.contributor.authorPiqueras de Noriega, Javier
dc.contributor.authorDe Diego, N.
dc.contributor.authorLLopis, J.
dc.contributor.authorMoser, P.
dc.date.accessioned2023-06-20T18:57:33Z
dc.date.available2023-06-20T18:57:33Z
dc.date.issued1989-06
dc.description© Editions Physique
dc.description.abstractPositron annihilation (PA) is a sensitive technique for detection of vacancy-type defects in crystals, that has been widely used in recent years to study defects in semiconductors (1). On the other side, CL and other luminescence techniques have been applied (2) to study the defect distribution in semiconductor wafers. In some cases PA can be useful to interpret results obtained by CL-SEM (3). In this work PA and CL have been used to investigate the distribution and nature of defects in GaP : S, GaAs : Te and undoped SI GaAs wafers. CL intensity, dislocation density and vacancy concentration profiles have been measured. The latter has been obtained by positron lifetime measurements.
dc.description.departmentDepto. de Física de Materiales
dc.description.facultyFac. de Ciencias Físicas
dc.description.refereedTRUE
dc.description.statuspub
dc.eprint.idhttps://eprints.ucm.es/id/eprint/25122
dc.identifier.citation1) G. Dlubek and R. Krause, Phys. Stat. Sol. (a) lq2, 443 (1987) 2) M. Tajima, in "Defects and Properties of Semiconductors: Defect Engineering", edited by J. Chikawa (Tokyo, Japan: 1987) p. 37 3) F. Dominguez-Adame, J. Piqueras, N. de Diego and J. Llopis, J. Appl. Phys. 63, 2583 (1988)
dc.identifier.doi10.1051/jphyscol:1989633
dc.identifier.issn0035-1687
dc.identifier.officialurlhttp://dx.doi.org/10.1051/jphyscol:1989633
dc.identifier.relatedurlhttp://jphyscol.journaldephysique.org
dc.identifier.relatedurlhttp://hal.archives-ouvertes.fr/jpa-00229664/
dc.identifier.urihttps://hdl.handle.net/20.500.14352/58999
dc.issue.number6
dc.journal.titleRevue de Physique Appliquee
dc.page.final179
dc.page.initial179
dc.publisherEditions Physique
dc.rights.accessRightsmetadata only access
dc.subject.cdu538.9
dc.subject.keywordPhysics
dc.subject.keywordMultidisciplinary
dc.subject.ucmFísica de materiales
dc.titleCathodoluminescence and positron-annihilation study of defect distribution in III-V wafers
dc.typejournal article
dc.volume.number24
dspace.entity.typePublication
relation.isAuthorOfPublicationdbc02e39-958d-4885-acfb-131220e221ba
relation.isAuthorOfPublication.latestForDiscoverydbc02e39-958d-4885-acfb-131220e221ba
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