Annealing and irradiation induced infrared luminescence of Bi_2Sr_2CaCu_2O_x ceramics

Abstract

Infrared luminescence of Bi2Sr2CaCu2Ox ceramics, in the range 800 to 1800 nm (0.7 to 1.5 eV) has been investigated by photoluminescence and cathodoluminescence in the scanning electron microscope (SEM). Untreated samples do not show infrared luminescence while annealed or electron irradiated samples show an emission band at about 950 nm (1.3 eV). Micro-Raman spectroscopy is used to investigate the structural changes produced by the treatments and to relate them to the observed luminescence. The relation of the 950 nm band with disorder in the oxygen sublattice is discussed.