Cathodoluminescence and REBIC study of defects in tin oxide

Simple item page
dc.book.title24th International Conference on Microelectronics (MIEL 2004)
dc.contributor.authorMaestre Varea, David
dc.contributor.authorCremades Rodríguez, Ana Isabel
dc.contributor.authorPiqueras de Noriega, Javier
dc.date.accessioned2023-06-20T13:40:05Z
dc.date.available2023-06-20T13:40:05Z
dc.date.issued2004
dc.description© 2004 American Institute of Physics. International Conference on Microelectronics (24. 2004.Nis, Servia). This work has been supported by MCYT (Project No. MAT 2000-2119). D. M. acknowledges a grant from MCYT.
dc.description.abstractCathodoluminescence (CL) and remote electron beam induced current (REBIC) in the scanning electron microscope (SEM) has been used to investigate the electron recombination mechanisms in tin oxide. Sintered material prepared from high purity powder has been found to show a strong dependence of the CL emission on the thermal treatments applied during sample preparation. SEM images show the presence of nano and microcrystalline grains. The correlation of the grain size and morphology with the optical emission is analysed by CL microscopy and spectroscopy. The evolution of the luminescence bands with mechanical milling shows a complex evolution of the 1.94 eV and 2.58 eV emissions which is explained by formation and recovery of defects during milling. REBIC measurements and imaging are used to characterize the formation of a potential barrier at the grain boundaries.
dc.description.departmentDepto. de Física de Materiales
dc.description.facultyFac. de Ciencias Físicas
dc.description.refereedTRUE
dc.description.sponsorshipMCYT (Spain)
dc.description.statuspub
dc.eprint.idhttps://eprints.ucm.es/id/eprint/23262
dc.identifier.citation1. G. Martinelli, M. C. Carotta, E. Traversa, and G. Ghiotti, MRS Bull. 24, 30 (1999). 2. C. Xu, J. Tamaki, N. Miura, and N. Yamazoe, Sens. Actuators B 3, 147 (1991). 3. H. J. Van Daal, Solid State Commun. 6, 5 (1968). 4. J. P. Fillard and M. de Murcia, Phys. Status Solidi A 30, 279 (1975). 5. S. S. Chang and D. K. Park, Mater. Sci. Eng., B 95, 55 (2002). 6. J. M. Themlin, R. Sporken, J. Darville, R. Caudano, and J. M. Gilles, Phys. Rev. B 42, 11914 (1990). 7. D. F. Crabtree, J. Phys. D 7, L22 (1974). 8. D. F. Crabtree, J. Phys. D 7, L17 (1974). 9 .E. De Fre´sart, J. Darville, and J. M. Gilles, Surf. Sci. 126, 518 (1983). 10. D. F. Cox, T. B. Fryberger, and S. Semancik, Phys. Rev. B 38, 2072 (1988). 11. A. Urbieta, P. Ferna´ndez, Ch. Hardalov, J. Piqueras, and T. Sekiguchi, Mater. Sci. Eng., B 91–92, 345 (2002). 12.P. R. Bueno, E. R. Leite, M. M. Oliveira, M. O. Orlandi, and E. Longo, Appl. Phys. Lett. 79, 48 (2001). 13. R. Radoi, P. Ferna´ndez, J. Piqueras, M. Wiggins, and J. Solís, Nanotechnology 14, 794 (2003). 14. C. C. Koch, Nanostruct. Mater. 2, 109 (1993). 15 C. Díaz-Guerra, A. Montone, J. Piqueras, and F. Cardellini, Semicond. Sci. Technol. 17, 77 (2002). 16 E. Nogales, A. Montone, F. Cardellini, B. Méndez, and J. Piqueras, Semicond. Sci. Technol. 17, 1267 (2002).
dc.identifier.isbn0-7803-8166-1
dc.identifier.officialurlhttp://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=1314854
dc.identifier.relatedurlhttp://ieeexplore.ieee.org
dc.identifier.urihttps://hdl.handle.net/20.500.14352/53299
dc.language.isoeng
dc.page.final436
dc.page.initial433
dc.page.total4
dc.publisherIEEE
dc.relation.ispartofseriesProceedings (International Conference on Microelectronics)
dc.relation.projectIDMAT 2000-2119
dc.rights.accessRightsopen access
dc.subject.cdu538.9
dc.subject.keywordGrain-Boundaries
dc.subject.keywordSurface
dc.subject.ucmFísica de materiales
dc.titleCathodoluminescence and REBIC study of defects in tin oxide
dc.typebook part
dc.volume.number2
dspace.entity.typePublication
relation.isAuthorOfPublication43cbf291-2f80-4902-8837-ea2a9ffaa702
relation.isAuthorOfPublicationda0d631e-edbf-434e-8bfd-d31fb2921840
relation.isAuthorOfPublication.latestForDiscovery43cbf291-2f80-4902-8837-ea2a9ffaa702
Download
Original bundle
Now showing 1 - 1 of 1
Thumbnail Image
Name:
CremadesAna32.pdf
Size:
398.64 KB
Format:
Adobe Portable Document Format
downoload Download
Collections
Secciones de libros