Effect of ion beam milling on the defect structure of CdTe
| dc.contributor.author | Panin, G. N. | |
| dc.contributor.author | Fernández Sánchez, Paloma | |
| dc.contributor.author | Piqueras De Noriega, Francisco Javier | |
| dc.date.accessioned | 2023-06-20T19:04:28Z | |
| dc.date.available | 2023-06-20T19:04:28Z | |
| dc.date.issued | 1996-09 | |
| dc.description | © 1996 IOP Publishing Ltd. This work has been supported by DGICYT (project PB93-1256). G Panin thanks the Ministerio de Educacion y Ciencia for a research grant. Japan Energy Corporation is acknowledged for providing some of the samples. | |
| dc.description.abstract | The effect of ion milling on the defect structure of CdTe crystals has been investigated in the scanning electron microscope by cathodoluminescence. Enhancement in the luminescence intensity is observed after ion treatment. Luminescence spectra of treated and untreated zones of the samples indicate that ion milling causes generation of tellurium vacancies and filling of cadmium vacancies in a subsurface layer. In addition, enhancement of the concentration of cadmium vacancy related defects in the region extending up to 20 mu m from the layer is revealed. This effect is discussed in connection with models of p- to n-type conversion of CdTe during ion milling. | |
| dc.description.department | Depto. de Física de Materiales | |
| dc.description.faculty | Fac. de Ciencias Físicas | |
| dc.description.refereed | TRUE | |
| dc.description.sponsorship | DGICYT | |
| dc.description.sponsorship | Ministerio de Educacion y Ciencia | |
| dc.description.status | pub | |
| dc.eprint.id | https://eprints.ucm.es/id/eprint/26735 | |
| dc.identifier.doi | 10.1088/0268-1242/11/9/018 | |
| dc.identifier.issn | 0268-1242 | |
| dc.identifier.officialurl | http://dx.doi.org/10.1088/0268-1242/11/9/018 | |
| dc.identifier.relatedurl | http://iopscience.iop.org | |
| dc.identifier.uri | https://hdl.handle.net/20.500.14352/59208 | |
| dc.issue.number | 9 | |
| dc.journal.title | Semiconductor Science and Technology | |
| dc.language.iso | eng | |
| dc.page.final | 1357 | |
| dc.page.initial | 1354 | |
| dc.publisher | IOP Publishing Ltd | |
| dc.relation.projectID | PB93-1256 | |
| dc.rights.accessRights | restricted access | |
| dc.subject.cdu | 538.9 | |
| dc.subject.keyword | Deep Centers | |
| dc.subject.keyword | Cathodoluminescence | |
| dc.subject.keyword | Conversion Hg_(1-X)Cd_xTe | |
| dc.subject.ucm | Física de materiales | |
| dc.title | Effect of ion beam milling on the defect structure of CdTe | |
| dc.type | journal article | |
| dc.volume.number | 11 | |
| dcterms.references | [1] Blackman M V, Charlton D E, Jenner M D, Purdy D R, Wotherspoon J T M, Elliot C T and White A M 1987 Electron Lett. 23 978 [2] Bahir G and Finkman E 1989 J. Vac. Sci. Technol. A 7 348 [3] Panin G N and Yakimov E B 1989 Sov. Phys.–Semicond. 23 840 [4] Barbot J F, Kronewitz J and Schroter W 1990 ¨ Appl. Phys. Lett. 57 2689 [5] Chien Kuo-Fu, Fahrenbruch A L and Bube R H 1988 J. Appl. Phys. 64 2792 [6] Blanchard C, Favre J, Barbot J F, Desoyer J C, Toulemonde M, Konczykowski M, Le Scoul D and Dessus J L 1990 J. Appl. Phys. 68 3237 [7] Hofmann D M, Städler W, Oettinger K, Meyer B K, Omling P, Salk M, Benz K W, Weigel E and Müller-Vogt G 1993 Mater. Sci. Eng. B 16 128 [8] Pal U, Piqueras J, Fernández P, Serrano M D and Diéguez E 1994 J. Appl. Phys. 76 3720 [9] Domínguez-Adame F, Piqueras J and Fernández P 1991 Appl. Phys. Lett. 58 257 [10] Casey H C and Jayson J S 1971 J. Appl. Phys. 42 2774 [11] Pal U, Fernández P, Piqueras J, Serrano M D and Diéguez E 1994 Defect Recognition and Image Processing in Semiconductors and Devices (Inst. Phys. Conf. Ser. 135) 177 [12] Pal U, Fernández P and Piqueras J 1995 Mater. Lett. 23 227 [13] Takebe T, Saraie J and Matsunami H 1982 J. Appl. Phys. 53 457 [14] Pal U, Fernández P, Piqueras J, Sochinskii N V and Diéguez E 1995 J. Appl. Phys. 78 1992 | |
| dspace.entity.type | Publication | |
| relation.isAuthorOfPublication | daf4b879-c4a8-4121-aaff-e6ba47195545 | |
| relation.isAuthorOfPublication | 68dabfe9-5aec-4207-bf8a-0851f2e37e2c | |
| relation.isAuthorOfPublication.latestForDiscovery | daf4b879-c4a8-4121-aaff-e6ba47195545 |
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