Role of the surface states in the magnetotransport properties of ultrathin bismuth films

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dc.contributor.authorMarcano, N.
dc.contributor.authorSangiao, S.
dc.contributor.authorMagén, C.
dc.contributor.authorMorellon, L.
dc.contributor.authorIbarra,, M. R.
dc.contributor.authorPlaza, M.
dc.contributor.authorPérez García, Lucas
dc.date.accessioned2023-06-20T00:35:26Z
dc.date.available2023-06-20T00:35:26Z
dc.date.issued2010-09-29
dc.description©2010 The American Physical Society. This work was supported by Spanish Ministry of Science (through Projects No. MAT2007-65965-C02-02) and No. MAT2008-06567-C02 including FEDER funding, the Aragón Regional Government and the Universidad Complutense de Madrid. N.M. and S.S. acknowledge financial support from Spanish CSIC (JAE program) and Spanish MEC (FPU program). M.P. acknowledges Comunidad de Madrid and European Social Fund for financial support. The authors are especially thankful to I.Rivas, R. Valero, L. Casado, and R. Córdoba for assistance with optical lithography, XRD and lamellae preparation.
dc.description.abstractWe have investigated the magnetotransport properties of ultrathin films of Bi grown on thermally oxidized Si(001) substrates with thickness ranging from 10 to 100 nm at temperatures down to 2 K and in magnetic fields up to 90 kOe. Remarkable differences both in temperature and field dependence of the Hall resistivity are found for the films with thickness above and below 20 nm. These observations can be explained due to the presence of surface states, which play an important role in determining the electronic transport properties of the thinnest films. The estimated surface carrier density 4 x 10^(13) cm^(-2) at room temperature correlates well with that recently reported from angle-resolved photoemission spectroscopy on ultrathin Bi(001) films.
dc.description.departmentDepto. de Física de Materiales
dc.description.facultyFac. de Ciencias Físicas
dc.description.refereedTRUE
dc.description.sponsorshipMinisterio de Economía y Competitividad (MINECO)
dc.description.sponsorshipCSIC
dc.description.sponsorshipFEDER funding
dc.description.sponsorshipGobierno de Aragón
dc.description.sponsorshipUniversidad Complutense de Madrid
dc.description.sponsorshipComunidad de Madrid
dc.description.statuspub
dc.eprint.idhttps://eprints.ucm.es/id/eprint/45431
dc.identifier.doi10.1103/PhysRevB.82.125326
dc.identifier.issn1098-0121
dc.identifier.officialurlhttp://dx.doi.org/10.1103/PhysRevB.82.125326
dc.identifier.relatedurlhttps://journals.aps.org
dc.identifier.urihttps://hdl.handle.net/20.500.14352/42770
dc.issue.number12
dc.journal.titlePhysical review B
dc.language.isoeng
dc.publisherAmerican Physical Society
dc.relation.projectIDMAT2007-65965-C02-02
dc.relation.projectIDMAT2008-06567-C02
dc.relation.projectIDJAE program
dc.relation.projectIDFPU program
dc.rights.accessRightsopen access
dc.subject.cdu538.9
dc.subject.keywordTo-semiconductor transition
dc.subject.keywordThin-films
dc.subject.ucmFísica de materiales
dc.subject.ucmFísica del estado sólido
dc.subject.unesco2211 Física del Estado Sólido
dc.titleRole of the surface states in the magnetotransport properties of ultrathin bismuth films
dc.typejournal article
dc.volume.number82
dspace.entity.typePublication
relation.isAuthorOfPublication01b88344-8278-4947-9475-d5b2a652b9d7
relation.isAuthorOfPublication.latestForDiscovery01b88344-8278-4947-9475-d5b2a652b9d7
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