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Role of deep levels and interface states in the capacitance characteristics of all‐sputtered CuInSe2/CdS solar cell heterojunctions

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dc.contributor.authorMartil De La Plaza, Ignacio
dc.contributor.authorGonzález Díaz, Germán
dc.contributor.authorSánchez Quesada, Francisco
dc.contributor.authorSantamaría Sánchez-Barriga, Jacobo
dc.contributor.authorIborra, E.
dc.date.accessioned2023-06-20T19:08:59Z
dc.date.available2023-06-20T19:08:59Z
dc.date.issued1989-04-15
dc.description© American Institute of Physics. This work was partially financed by the Spain-USA Joint Committe under Grant No. CCA-8411046.
dc.description.abstractAll‐sputtered CuInSe2/CdS solar cellheterojunctions have been analyzed by means of capacitance‐frequency (C‐F) and capacitance‐bias voltage (C‐V) measurements. Depending on the CuInSe2 layer composition, two kinds of heterojunctions were analyzed: type 1 heterojunctions (based on stoichiometric or slightly In‐rich CuInSe2 layers) and type 2 heterojunctions (based on Cu‐rich CuInSe2 layers). In type 1 heterojunctions, a 80‐meV donor level has been found. Densities of interface states in the range 101 0–101 1 cm2 eV− 1 (type 1) and in the range 101 2–101 3 cm− 2 eV− 1 (type 2) have been deduced. On the other hand, doping concentrations of 1.6×101 6 cm− 3 for stoichiometric CuInSe2 (type 1 heterojunction) and 8×101 7 cm− 3 for the CdS (type 2 heterojunction) have been deduced from C‐Vmeasurements.
dc.description.departmentDepto. de Estructura de la Materia, Física Térmica y Electrónica
dc.description.facultyFac. de Ciencias Físicas
dc.description.refereedTRUE
dc.description.sponsorshipSpain-USA Joint Committe
dc.description.statuspub
dc.eprint.idhttps://eprints.ucm.es/id/eprint/27153
dc.identifier.doi10.1063/1.342676
dc.identifier.issn0021-8979
dc.identifier.officialurlhttp://dx.doi.org/10.1063/1.342676
dc.identifier.relatedurlhttp://scitation.aip.org/
dc.identifier.urihttps://hdl.handle.net/20.500.14352/59315
dc.issue.number8
dc.journal.titleJournal of Applied Physics
dc.language.isoeng
dc.page.final3241
dc.page.initial3236
dc.publisherAmerican Institute of Physics
dc.relation.projectIDCCA-8411046
dc.rights.accessRightsopen access
dc.subject.cdu537
dc.subject.keywordPhysics
dc.subject.keywordApplied.
dc.subject.ucmElectricidad
dc.subject.ucmElectrónica (Física)
dc.subject.unesco2202.03 Electricidad
dc.titleRole of deep levels and interface states in the capacitance characteristics of all‐sputtered CuInSe2/CdS solar cell heterojunctions
dc.typejournal article
dc.volume.number65
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