Bonding structure and hydrogen content in silicon nitride thin films deposited by the electron cyclotron resonance plasma method

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dc.contributor.authorMartil De La Plaza, Ignacio
dc.contributor.authorGonzález Díaz, Germán
dc.contributor.authorPrado Millán, Álvaro Del
dc.contributor.authorSan Andrés Serrano, Enrique
dc.date.accessioned2023-06-20T10:44:26Z
dc.date.available2023-06-20T10:44:26Z
dc.date.issued2004-07-01
dc.descriptionEuropean Vacuum Congress (EVC-8)(8. 2003, Berlin, Alemania) / Annual Conference of the German-Vacuum-Society (DVG) (2. 2003, Berlin, Alemania). © 2003 Elsevier B.V. All rights reserved. This work was partially supported by the Ministry of Science and Technology (Spain) under contract TIC2001 y 1253.
dc.description.abstractThe bonding structure and hydrogen content of amorphous hydrogenated silicon nitride (a-SiNx:H) thin films have been investigated by infrared spectroscopy and ion beam techniques. Electron cyclotron resonance plasma enhanced chemical vapor deposition was used to produce these films under different values of gas flow ratio, deposition temperature, and microwave power. The amount of bonded hydrogen was calculated from the N-H and Si-H infrared absorption bands. An increase of the SiH4 partial pressure during deposition was found to have the same effect on the H content as an increase of the substrate temperature: both cause a decrease of the N-H bond density and an increase in the number of Si-H bonds. This is explained by a competitive process in the formation of N-H and Si-H bonds during the growth of the film, whereby Si-H bonds are favored at the expense of N-H bonds when either the SiH4 flow or the substrate temperature are increased. Such tendency to chemical order is compared with previous results in which the same behavior was induced by thermal annealing or ion beam bombardment.
dc.description.departmentDepto. de Estructura de la Materia, Física Térmica y Electrónica
dc.description.facultyFac. de Ciencias Físicas
dc.description.refereedTRUE
dc.description.sponsorshipMinistry of Science and Technology (Spain)
dc.description.statuspub
dc.eprint.idhttps://eprints.ucm.es/id/eprint/26038
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dc.identifier.doi10.1016/j.tsf.2003.12.084
dc.identifier.issn0040-6090
dc.identifier.officialurlhttp://dx.doi.org/10.1016/j.tsf.2003.12.084
dc.identifier.relatedurlhttp://www.sciencedirect.com
dc.identifier.urihttps://hdl.handle.net/20.500.14352/51119
dc.issue.number1-2
dc.journal.titleThin Solid Films
dc.language.isoeng
dc.page.final207
dc.page.initial203
dc.publisherElsevier Science SA
dc.relation.projectIDTIC2001
dc.relation.projectID1253
dc.rights.accessRightsopen access
dc.subject.cdu537
dc.subject.keywordFree-Energy Model
dc.subject.keywordSi-SiO2 Interfaces
dc.subject.keywordAlloys
dc.subject.keywordSi.
dc.subject.ucmElectricidad
dc.subject.ucmElectrónica (Física)
dc.subject.unesco2202.03 Electricidad
dc.titleBonding structure and hydrogen content in silicon nitride thin films deposited by the electron cyclotron resonance plasma method
dc.typejournal article
dc.volume.number459
dspace.entity.typePublication
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relation.isAuthorOfPublicationa5ab602d-705f-4080-b4eb-53772168a203
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relation.isAuthorOfPublication.latestForDiscoverya5ab602d-705f-4080-b4eb-53772168a203
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