Cathodoluminescence and scanning tunnelling spectroscopy of ZnO single crystals
| dc.contributor.author | Urbieta Quiroga, Ana Irene | |
| dc.contributor.author | Fernández Sánchez, Paloma | |
| dc.contributor.author | Hardalo, C. | |
| dc.contributor.author | Piqueras De Noriega, Francisco Javier | |
| dc.contributor.author | Sekiguchi, T. | |
| dc.date.accessioned | 2023-06-20T19:01:12Z | |
| dc.date.available | 2023-06-20T19:01:12Z | |
| dc.date.issued | 2002-04-30 | |
| dc.description | © 2002 Elsevier Science B.V. International Conference on Defects: Recognition, Imaging and Physics in Semiconductors (DRIP IX) (9. 2001. Rimini. Italia). This work was supported by MCYT-DGI (Project MAT2000–2119). Ch. Hardalov thanks U. Complutense for a Sabbatical grant. Thanks are due to Professor N. Sakagami (Akita National College of Technology, Japan) and Professor S. Miyashita (Toyama Medical and Pharmaceutical University, Japan) for their contribution to crystal preparation. | |
| dc.description.abstract | Bulk ZnO single crystals grown by the hydrothermal (HTT) and alkali flux methods have been investigated by means of scanning tunnelling spectroscopy (STS) and time resolved cathodoluminescence (CL). Measurements were performed in the different crystalline faces. The results from these measurements show that both, surface electrical properties and luminescent characteristics depend on the face studied. Polar O-terminated surfaces show an intrinsic conduction behaviour with a surface band gap ranging from 0.4 to 0.8 eV. Zn-terminated surfaces show mainly n-type conduction. The non-polar faces present either intrinsic or p-type behaviour. CL spectra show that the relative intensity of the different components of the deep level band also depends on the atomic structure of the face under study. This complex behaviour is clearly revealed from the time resolved spectra. The differences observed are attributed to the nature of the defects present in each case and, in particular, to different impurity incorporation processes that could be mainly controlled by the atomic configuration and polarity of the planes. | |
| dc.description.department | Depto. de Física de Materiales | |
| dc.description.faculty | Fac. de Ciencias Físicas | |
| dc.description.refereed | TRUE | |
| dc.description.sponsorship | MCYT-DGI | |
| dc.description.sponsorship | U. Complutense | |
| dc.description.status | pub | |
| dc.eprint.id | https://eprints.ucm.es/id/eprint/26292 | |
| dc.identifier.doi | 10.1016/S0921-5107(01)01062-5 | |
| dc.identifier.issn | 0921-5107 | |
| dc.identifier.officialurl | http://dx.doi.org/10.1016/S0921-5107(01)01062-5 | |
| dc.identifier.relatedurl | http://www.sciencedirect.com | |
| dc.identifier.uri | https://hdl.handle.net/20.500.14352/59116 | |
| dc.journal.title | Materials Science and Engineering B-Solid State Materials for Advanced Technology | |
| dc.language.iso | eng | |
| dc.page.final | 348 | |
| dc.page.initial | 345 | |
| dc.publisher | Elsevier Science Sa | |
| dc.relation.projectID | MAT2000–2119 | |
| dc.rights.accessRights | restricted access | |
| dc.subject.cdu | 538.9 | |
| dc.subject.keyword | Zinc-Oxide | |
| dc.subject.keyword | Tunneling Spectroscopy | |
| dc.subject.keyword | Microscopy | |
| dc.subject.ucm | Física de materiales | |
| dc.title | Cathodoluminescence and scanning tunnelling spectroscopy of ZnO single crystals | |
| dc.type | journal article | |
| dc.volume.number | 91 | |
| dcterms.references | [1] P.R. Emtage, J. Appl. Phys. 48 (19) (1977) 4372. [2] L.F. Lou, J. Appl. Phys. 50 (1) (1979) 555. [3] R. Einzinger, Appl. Surf. Sci. 3 (1979) 5372. [4] D.C. Reynolds, D.C. Look, B. Jogai, Solid State Commun. 99 (1996) 873. [5] P. Zu, Z.K. Tang, G.K.L. Wong, M. Kawasaki, A. Ohtomo, H. Koinuma, Y. Segawa, Solid State Commun. 103 (1997) 459. [6] D.C. Reynolds, D.C. Look, B. Jogai, H. Morkoc¸, Solid State Commun. 102 (1997) 643. [7] D.C. Look, D.C. Reynolds, J.W. Hemsky, J.R. Sizelove, R.L Jones, C.W. Litton, T. Wille, G. Cantwell, W.C. Harsch Proccedings of the 10th Conference on Semiconducting and Insulat ing Materials (SIMC-X) IEEE (1999) 301. [8] Y.S. Park, D.C. Reynolds, J. Appl. Phys. 38 (1967) 756. [9] D.C. Look, D.C. Reynolds, J.R. Sizelove, R.L. Jones, C.W. Litton, G. Cantwell, W.C. Harsch, Solid State Commun. 150 (1998) 399 [10] N. Sakagami, K. Shibayama, Jpn. J. Appl. Phys. 20 (1981) 201. [11] N. Ohashi, T. Ohgaki, T. Nakata, T. Tsurumi, T. Sekiguchi, H. Haneda, J. Tanaka, J. Kor. Phys. Soc. 35 (1999) S287. [12] T. Sekiguchi, S. Miyashita, K. Obara, T. Shishido, N. Sakagami, J. Cryst. Growth 214/215 (2000) 72. [13] T. Sekiguchi, N. Ohashi, Y. Terada, Jpn. J. Appl. Phys. 36 (1997) L289 [14] A. Urbieta, P. Ferna´ndez, J. Piqueras, T. Sekiguchi, Semicond. Sci. Technol. 16 (2001) 589–593. [15] F. Dom´ınguez-Adame, J. Piqueras, P. Ferna´ndez, Appl. Phys. Lett. 58 (1991) 257 [16] D.A. Bonnell, D.R. Clarke, J. Am. Ceram. Soc. 71 (1988) 629. [17] G.S. Rohrer, D.A. Bonnell, J. Am. Ceram. Soc. 73 (1990) 3026. [18] G.S. Rohrer, D.A. Bonnell, J. Vac. Sci. Technol. B9 (1991) 783. [19] P.M. Thidabo, G.S. Rohrer, D.A. Bonnell, Surf. Sci. 318 (1994) 379 [20] O.F. Schirmer, D. Zwingel, Solid State Commun. 8 (1970) 1959. [21] R.T. Cox, D. Bloch, A. Herve, R. Picard, C. Santier, Solid State Commun. 25 (1978) 77. [22] R. Kammermayer, V. Wittwer, N. Eisenreich, K. Luchner, Solid State Commun. 19 (1976) 461. [23] B.G. Wang, E.W. Shi, W.Z. Zhong, Cryst. Res. Technol. 32 (1997) 659. | |
| dspace.entity.type | Publication | |
| relation.isAuthorOfPublication | f8df9b48-67a9-4518-9c37-a6bd1b37c150 | |
| relation.isAuthorOfPublication | daf4b879-c4a8-4121-aaff-e6ba47195545 | |
| relation.isAuthorOfPublication | 68dabfe9-5aec-4207-bf8a-0851f2e37e2c | |
| relation.isAuthorOfPublication.latestForDiscovery | f8df9b48-67a9-4518-9c37-a6bd1b37c150 |
Download
Original bundle
1 - 1 of 1