Luminescence study of thermal treated and laser irradiated Bi_12GeO_20 and Bi_12SiO_20 crystals

dc.contributor.authorCremades Rodríguez, Ana Isabel
dc.contributor.authorPiqueras De Noriega, Francisco Javier
dc.contributor.authorRemón, A.
dc.contributor.authorGarcía, J. A.
dc.contributor.authorSantos, M. T.
dc.contributor.authorDieguez, E.
dc.date.accessioned2023-06-20T18:52:53Z
dc.date.available2023-06-20T18:52:53Z
dc.date.issued1998-06-15
dc.description© 1998 American Institute of Physics. This work has been supported by DGES (Project No. PB 93-1256) and CICYT (Project No. TXT96-1688).
dc.description.abstractChanges on the defect structure of Bi12GeO20 (BGO) and Bi12SiO20 (BSO) crystals induced by thermal treatments and laser irradiation have been studied by means of cathodoluminescence in the scanning electron microscope. The results have been compared to those previously reported for untreated and electron irradiated samples and recombination mechanisms responsible for some of the observed luminescence bands are discussed. Annealing of EGO samples causes the appearance of a new luminescence band at about 390 nm. The centers responsible for this band decorate the deformation slip bands in quenched EGO as observed in the cathodoluminescence images. The emission observed in BSO in the same spectral range is quenched during the annealing treatment. The annealing induced reduction of Bi ions to metallic Bi appears to be related to the quenching of a band at 640 nm observed in untreated samples.
dc.description.departmentDepto. de Física de Materiales
dc.description.facultyFac. de Ciencias Físicas
dc.description.refereedTRUE
dc.description.sponsorshipDGES
dc.description.sponsorshipCICYT
dc.description.statuspub
dc.eprint.idhttps://eprints.ucm.es/id/eprint/23585
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dc.identifier.doi10.1063/1.367975
dc.identifier.issn0021-8979
dc.identifier.officialurlhttp://dx.doi.org/10.1063/1.367975
dc.identifier.relatedurlhttp://scitation.aip.org/
dc.identifier.urihttps://hdl.handle.net/20.500.14352/58845
dc.issue.number12
dc.journal.titleJournal of Applied Physics
dc.language.isoeng
dc.page.final7952
dc.page.initial7948
dc.publisherAmerican Institute of Physics
dc.relation.projectIDPB 93-1256
dc.relation.projectIDTXT96-1688
dc.rights.accessRightsopen access
dc.subject.cdu538.9
dc.subject.keywordBi_4Ge_3O_12
dc.subject.keywordCathodoluminescence
dc.subject.keywordPhotoluminescence
dc.subject.keywordInterface
dc.subject.keywordGrowth
dc.subject.ucmFísica de materiales
dc.titleLuminescence study of thermal treated and laser irradiated Bi_12GeO_20 and Bi_12SiO_20 crystals
dc.typejournal article
dc.volume.number83
dspace.entity.typePublication
relation.isAuthorOfPublicationda0d631e-edbf-434e-8bfd-d31fb2921840
relation.isAuthorOfPublication68dabfe9-5aec-4207-bf8a-0851f2e37e2c
relation.isAuthorOfPublication.latestForDiscoveryda0d631e-edbf-434e-8bfd-d31fb2921840
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