Deep energy levels in CdTe and CdZnTe
| dc.contributor.author | Castaldini, A. | |
| dc.contributor.author | Cavallini, A. | |
| dc.contributor.author | Fraboni, B | |
| dc.contributor.author | Fernández Sánchez, Paloma | |
| dc.contributor.author | Piqueras De Noriega, Francisco Javier | |
| dc.date.accessioned | 2023-06-20T19:02:26Z | |
| dc.date.available | 2023-06-20T19:02:26Z | |
| dc.date.issued | 1998-02-15 | |
| dc.description | (C) 1998 American Institute of Physics. | |
| dc.description.abstract | The deep levels present in semiconducting CdTe and semi-insulating CdTe:Cl and Cd0.8Zn0.2Te have been investigated by means of cathodoluminescence, deep level transient spectroscopy (DLTS), photo-induced current transient spectroscopy, and photo-DLTS. The latter two methods, which can be applied to semi-insulating materials, allow to characterize the deep traps located up to midgap and can determine whether they are hole or electron traps. We have identified 12 different traps, some common to all the investigated samples, some peculiar to one of them. A comparison of the results obtained from the various materials is given and the status of defect models is reviewed. | |
| dc.description.department | Depto. de Física de Materiales | |
| dc.description.faculty | Fac. de Ciencias Físicas | |
| dc.description.refereed | TRUE | |
| dc.description.sponsorship | DGICYT | |
| dc.description.status | pub | |
| dc.eprint.id | https://eprints.ucm.es/id/eprint/26387 | |
| dc.identifier.doi | 10.1063/1.366946 | |
| dc.identifier.issn | 0021-8979 | |
| dc.identifier.officialurl | http://dx.doi.org/10.1063/1.366946 | |
| dc.identifier.relatedurl | http://scitation.aip.org/ | |
| dc.identifier.uri | https://hdl.handle.net/20.500.14352/59151 | |
| dc.issue.number | 4 | |
| dc.journal.title | Journal of Applied Physics | |
| dc.language.iso | eng | |
| dc.page.final | 2126 | |
| dc.page.initial | 2121 | |
| dc.publisher | American Institute of Physics | |
| dc.relation.projectID | PB93-1256 | |
| dc.rights.accessRights | open access | |
| dc.subject.cdu | 538.9 | |
| dc.subject.keyword | Current Transient Spectroscopy | |
| dc.subject.keyword | Resistivity Bulk Material | |
| dc.subject.keyword | Cadmium Telluride | |
| dc.subject.keyword | Defects | |
| dc.subject.keyword | Crystals | |
| dc.subject.keyword | Cathodoluminescence | |
| dc.subject.keyword | Cd1-Xznxte | |
| dc.subject.keyword | Cl | |
| dc.subject.keyword | Semiconductors | |
| dc.subject.keyword | Detectors | |
| dc.subject.ucm | Física de materiales | |
| dc.title | Deep energy levels in CdTe and CdZnTe | |
| dc.type | journal article | |
| dc.volume.number | 83 | |
| dcterms.references | 1. H. J. von Bardeleben, V. Mazoyer, X. Launay, and J. C. launay, Semicond. Sci. Technol. 10 163 (1996). 2. J. P. Zielinger, M. Tapiero, Z. Guellil, G. Roosen, P. Delaye, J. C. Launay, and W. Mazoyer, Mater. Sci. Eng. B. 16, 273 (1993). 3. A. J. Strauss, Rev. Phys. Apple.12, 167 (1977). 4. J. W. Allen, Semicond. Sci. Technol, 10, 1049 (1995). 5. A. Castaldini, A. Cavallini, B. Fraboni, P. Fernández, and J. Piqueras, Appl. Phys. Lett. 69, 3507 (1996). 6. …… | |
| dspace.entity.type | Publication | |
| relation.isAuthorOfPublication | daf4b879-c4a8-4121-aaff-e6ba47195545 | |
| relation.isAuthorOfPublication | 68dabfe9-5aec-4207-bf8a-0851f2e37e2c | |
| relation.isAuthorOfPublication.latestForDiscovery | daf4b879-c4a8-4121-aaff-e6ba47195545 |
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