Scanning tunneling spectroscopy study of erbium doped GaSb crystals

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dc.contributor.authorHidalgo Alcalde, Pedro
dc.contributor.authorMéndez Martín, Bianchi
dc.contributor.authorPiqueras de Noriega, Javier
dc.contributor.authorPlaza, J. L.
dc.contributor.authorDieguez, E.
dc.date.accessioned2023-06-20T18:55:43Z
dc.date.available2023-06-20T18:55:43Z
dc.date.issued1999-08-01
dc.description© 1999 American Institute of Physics. This work was supported by DGES (Project No. PB96-0639) and by CICYT (Project Nos. ESP95-0148 and ESP98-1340)
dc.description.abstractEr doped GaSb single crystals have been studied by scanning tunneling spectroscopy (STS) and cathodoluminescence (CL) in a combined scanning electron microscope-scanning tunnelling microscope system. The surface band gap in doped samples has been found to be about 0.5 eV while in undoped crystals the gap is close to the bulk value. Inhomogeneities in the local electronic properties of the doped crystals are studied by a correlation of the CL images and STS data.
dc.description.departmentDepto. de Física de Materiales
dc.description.facultyFac. de Ciencias Físicas
dc.description.refereedTRUE
dc.description.sponsorshipDGES
dc.description.sponsorshipCICYT
dc.description.statuspub
dc.eprint.idhttps://eprints.ucm.es/id/eprint/24675
dc.identifier.citation1 X. Zhao, K. Hirakawa, and T. Ikoma, Appl. Phys. Lett. 54, 712 (1989). 2 H. Isshiki, H. Kobayashi, S. Yugo, and T. Kimura, Appl. Phys. Lett. 58, 484 (1991). 3 A. J. Neuhalfen and B. W. Wessels, Appl. Phys. Lett. 59, 2317 (1991). 4 M. Thaik, U. Hömmerich, R. N. Schwartz, R. G. Wilson, and J. M. Zavada, Appl. Phys. Lett. 71, 2641 (1997). 5 S. Kim, S. J. Rhee, D. A. Turnbull, X. Li, J. J. Coleman, S. G. Bishop, and P. B. Klein, Appl. Phys. Lett. 71, 2662 (1997). 6 Y. Sun and M. Wu, J. Appl. Phys. 78, 6691 (1995). 7 Y. Sun, M. Wu, and Y. Ting, J. Cryst. Growth 85, 449 (1996). 8 P. Hidalgo, B. Méndez, J. Piqueras, J. Plaza, and E. Diéguez, Semicond. Sci. Technol. 13, 1431 (1998). 9 R. J. Hammers, R. M. Tromp, and J. E. Demuth, Phys. Rev. Lett. 56, 1972 (1986). 10 R. M. Feenstra, Surf. Sci. 299/300, 965 (1994). 11 B. Méndez and J. Piqueras, J. Appl. Phys. 69, 2776 (1991). 12 A. Asenjo, A. Buendía, J. M. Gómez-Rodriguez, and A. Baró, J. Vac. Sci. Technol. B 12, 1658 (1994). 13 R. M. Feenstra, J. A. Stroscio, and A. P. Fein, Surf. Sci. 181, 295 (1987). 14 P. Hidalgo, B. Méndez, P. S. Dutta, J. Piqueras, and E. Diéguez, Phys. Rev. B 57, 6479 (1998). 15 B. Méndez, J. Piqueras, P. S. Dutta, and E. Diéguez, Mater. Sci. Eng., B 42, 38 (1996). 16 G. Panin, C. Díaz-Guerra, and J. Piqueras, Appl. Phys. Lett. 72, 2129 (1998).
dc.identifier.doi10.1063/1.370910
dc.identifier.issn0021-8979
dc.identifier.officialurlhttp://jap.aip.org/resource/1/japiau/v86/i3/p1449_s1
dc.identifier.relatedurlhttp://jap.aip.org/resource
dc.identifier.urihttps://hdl.handle.net/20.500.14352/58942
dc.issue.number3
dc.journal.titleJournal of Applied Physics
dc.language.isoeng
dc.page.final1451
dc.page.initial1449
dc.publisherAmerican Institute of Physics
dc.relation.projectIDPB96-0639
dc.relation.projectIDESP95-0148
dc.relation.projectIDESP98
dc.rights.accessRightsopen access
dc.subject.cdu538.9
dc.subject.keywordPhase Epitaxy
dc.subject.keywordCathodoluminescence
dc.subject.keywordPhotoluminescence
dc.subject.keywordMicroscopy
dc.subject.keywordExcitation
dc.subject.ucmFísica de materiales
dc.titleScanning tunneling spectroscopy study of erbium doped GaSb crystals
dc.typejournal article
dc.volume.number86
dspace.entity.typePublication
relation.isAuthorOfPublicationc834e5a4-3450-4ff7-8ca1-663a43f050bb
relation.isAuthorOfPublication.latestForDiscoveryc834e5a4-3450-4ff7-8ca1-663a43f050bb
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