Cathodoluminescence study of laser recrystallized CdTe layers

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dc.contributor.authorFernández Sánchez, Paloma
dc.contributor.authorPiqueras De Noriega, Francisco Javier
dc.contributor.authorSochinskii, N. V.
dc.contributor.authorMuñoz, V.
dc.contributor.authorBernardi, S.
dc.date.accessioned2023-06-20T19:02:20Z
dc.date.available2023-06-20T19:02:20Z
dc.date.issued1997-11-24
dc.description©2001. All Rights Reserved. One of the authors (N.V.S.) acknowledges the visiting professor fellowship from Universitat de Valencia (Spain). This work has been partially supported by Spanish Project Nos. GV-2205/94 and PB-93-1256.
dc.description.abstractCdTe(100)/GaAs(100) and CdTe(lll)/CdTe(lll) layers grown by metalorganic vapor phase epitaxy (MOVPE) were investigated The layers were recrystallized to improve their morphology by scanning the surface with a 100 mu m diameter spot from an Ar ion laser beam (lambda=514.4 nm). Cathodoluminescence spectra from both as-grown and recrystallized CdTe MOVPE layers are used to monitor the effect of the recrystallization procedure. The laser recrystallization results in important changes on the spectral distribution of luminescence. Deep-level bands associated to different defects are shown to be very sensitive to the laser recrystallization procedure. The effect of the different substrates on the defect structure of the layers is also related to the changes observed in the cathodoluminescence spectra.
dc.description.departmentDepto. de Física de Materiales
dc.description.facultyFac. de Ciencias Físicas
dc.description.refereedTRUE
dc.description.sponsorshipGeneralitat Valenciana
dc.description.sponsorshipDGES
dc.description.statuspub
dc.eprint.idhttps://eprints.ucm.es/id/eprint/26384
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dc.identifier.doi10.1063/1.120257
dc.identifier.issn0003-6951
dc.identifier.officialurlhttp://dx.doi.org/10.1063/1.120257
dc.identifier.relatedurlhttp://scitation.aip.org
dc.identifier.urihttps://hdl.handle.net/20.500.14352/59149
dc.issue.number21
dc.journal.titleApplied Physics Letters
dc.language.isoeng
dc.page.final3098
dc.page.initial3096
dc.publisherAmer Inst Physics
dc.relation.projectIDGV-2205/94
dc.relation.projectIDPB-93-1256
dc.rights.accessRightsopen access
dc.subject.cdu538.9
dc.subject.keywordEpitaxial Layers
dc.subject.keywordDeep Centers
dc.subject.keywordCd1-Xznxte
dc.subject.keywordHg1-Xcdxte
dc.subject.keywordWafers
dc.subject.ucmFísica de materiales
dc.titleCathodoluminescence study of laser recrystallized CdTe layers
dc.typejournal article
dc.volume.number71
dspace.entity.typePublication
relation.isAuthorOfPublicationdaf4b879-c4a8-4121-aaff-e6ba47195545
relation.isAuthorOfPublication68dabfe9-5aec-4207-bf8a-0851f2e37e2c
relation.isAuthorOfPublication.latestForDiscoverydaf4b879-c4a8-4121-aaff-e6ba47195545
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