Large magnetoresistance of isolated domain walls in La_(0.7)Sr(0.3)MnO_3 nanowires

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dc.contributor.authorOrfila Rodríguez, Gloria
dc.contributor.authorSanchez-Manzano, David
dc.contributor.authorArora, Ashima
dc.contributor.authorCuéllar Jiménez, Fabian Andrés
dc.contributor.authorRuiz Gómez, Sandra
dc.contributor.authorRodriguez-Corvillo, Sara
dc.contributor.authorLópez, Sandra
dc.contributor.authorPeralta, Andrea
dc.contributor.authorCarreira, Santiago J.
dc.contributor.authorGallego, Fernando
dc.contributor.authorTornos Castillo, Javier
dc.contributor.authorRouco Gómez, Víctor
dc.contributor.authorRiquelme, Juan J.
dc.contributor.authorMunuera, Carmen
dc.contributor.authorMompean, Federico J.
dc.contributor.authorGarcia-Hernandez, Mar
dc.contributor.authorSefrioui Khamali, Zouhair
dc.contributor.authorVillegas Hernández, Javier Eulogio
dc.contributor.authorPérez García, Lucas
dc.contributor.authorRivera Calzada, Alberto Carlos
dc.contributor.authorLeón Yebra, Carlos
dc.contributor.authorValencia, Sergio
dc.contributor.authorSantamaría Sánchez-Barriga, Jacobo
dc.date.accessioned2024-02-05T11:43:31Z
dc.date.available2024-02-05T11:43:31Z
dc.date.issued2023-04-12
dc.description.abstractGeneration, manipulation, and sensing of magnetic domain walls are cornerstones in the design of efficient spintronic devices. Half-metals are amenable for this purpose as large low field magnetoresistance signals can be expected from spin accumulation at spin textures. Among half metals, La1−xSrxMnO3 (LSMO) manganites are considered as promising candidates for their robust half-metallic ground state, Curie temperature above room temperature (Tc = 360 K, for x = 1/3), and chemical stability. Yet domain wall magnetoresistance is poorly understood, with large discrepancies in the reported values and conflicting interpretation of experimental data due to the entanglement of various source of magnetoresistance, namely, spin accumulation, anisotropic magnetoresistance, and colossal magnetoresistance. In this work, the domain wall magnetoresistance is measured in LSMO cross-shape nanowires with single-domain walls nucleated across the current path. Magnetoresistance values above 10% are found to be originating at the spin accumulation caused by the mistracking effect of the spin texture of the domain wall by the conduction electrons. Fundamentally, this result shows the importance on non-adiabatic processes at spin textures despite the strong Hund coupling to the localized t2g electrons of the manganite. These large magnetoresistance values are high enough for encoding and reading magnetic bits in future oxide spintronic sensors.
dc.description.departmentDepto. de Física de Materiales
dc.description.facultyFac. de Ciencias Físicas
dc.description.refereedTRUE
dc.description.sponsorshipUnión Europea Horizonte 2020
dc.description.sponsorshipComunidad Autónoma de Madrid
dc.description.sponsorshipGobierno de España
dc.description.statuspub
dc.identifier.citationG. Orfila, D. Sanchez-Manzano, A. Arora, F. Cuellar, S. Ruiz-Gómez, S. Rodriguez-Corvillo, S. López, A. Peralta, S. J. Carreira, F. Gallego, J. Tornos, V. Rouco, J. J. Riquelme, C. Munuera, F. J. Mompean, M. Garcia-Hernandez, Z. Sefrioui, J. E. Villegas, L. Perez, A. Rivera-Calzada, C. Leon, S. Valencia, J. Santamaria, Large Magnetoresistance of Isolated Domain Walls in La2/3Sr1/3MnO3 Nanowires. Adv. Mater. 2023, 35, 2211176. https://doi.org/10.1002/adma.202211176
dc.identifier.doi10.1002/adma.202211176
dc.identifier.essn1521-4095
dc.identifier.issn0935-9648
dc.identifier.officialurlhttps://onlinelibrary.wiley.com/doi/full/10.1002/adma.202211176
dc.identifier.urihttps://hdl.handle.net/20.500.14352/98854
dc.journal.titleAdvanced Materials
dc.language.isoeng
dc.page.final2211176-9
dc.page.initial2211176-1
dc.publisherWiley
dc.relation.projectIDinfo:eu-repo/grantAgreement/AEI/Plan Estatal de Investigación Científica y Técnica y de Innovación 2017-2020/PID2020-118078RB-I00/ES/NUEVAS FUNCIONALIDADES PARA UNA ELECTRONICA DE OXIDOS 2D: MATERIA CUANTICA INDUCIDA POR EFFECTOS DE PROXIMIDAD/
dc.relation.projectIDPID2020-11556RB-100
dc.relation.projectIDinfo:eu-repo/grantAgreement/AEI/Plan Estatal de Investigación Científica y Técnica y de Innovación 2017-2020/PID2020-117024GB-C43/ES/NUEVOS MATERIALES PARA UNA CONMUTACION MAGNETICA EFICIENTE EN LA NANOESCALA /
dc.relation.projectIDinfo:eu-repo/grantAgreement/AEI/Plan Estatal de Investigación Científica y Técnica y de Innovación 2017-2020/PID2020-117024GB-C43/ES/NUEVOS MATERIALES PARA UNA CONMUTACION MAGNETICA EFICIENTE EN LA NANOESCALA /
dc.relation.projectIDY2020/NMT-6661 CAIRO-CM
dc.relation.projectIDANR-22CE30-0020
dc.relation.projectID2020/2094
dc.rightsAttribution 4.0 Internationalen
dc.rights.accessRightsopen access
dc.rights.urihttp://creativecommons.org/licenses/by/4.0/
dc.subject.cdu538.9
dc.subject.keywordDomain wall resistance
dc.subject.keywordMagnetoresistance
dc.subject.keywordManganites
dc.subject.keywordNanomagnetism
dc.subject.keywordSpintronics
dc.subject.ucmFísica del estado sólido
dc.subject.unesco2211 Física del Estado Sólido
dc.titleLarge magnetoresistance of isolated domain walls in La_(0.7)Sr(0.3)MnO_3 nanowires
dc.typejournal article
dc.type.hasVersionVoR
dc.volume.number35
dspace.entity.typePublication
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