Origin of yellow luminescence from reduced pressure grown bulk GaN crystals
| dc.contributor.author | Herrera Zaldiva, M. | |
| dc.contributor.author | Fernández Sánchez, Paloma | |
| dc.contributor.author | Piqueras De Noriega, Francisco Javier | |
| dc.contributor.author | Sukhoveyev, W. | |
| dc.contributor.author | Ivantsov, V. A. | |
| dc.contributor.author | Shreter, Y. G. | |
| dc.date.accessioned | 2023-06-20T19:01:50Z | |
| dc.date.available | 2023-06-20T19:01:50Z | |
| dc.date.issued | 2000-07 | |
| dc.description | © Springer-Verlag 2000. This work has been supported by DGES (Project PB96-0639). The Russian Fund for Basic Research (Project 98-01-01084) is acknowledged. | |
| dc.description.abstract | Cathodoluminescence (CL) in the scanning electron microscope has been applied to study the luminescence emission of GaN single crystals grown by LPE methods. CL spectra show the presence of near band edge and of yellow emissions. The latter has been found to be mainly related to rows of hillocks formed at the growth steps. The origin of the yellow luminescence is discussed PACS: 78.60Hk; 71.55Eq. | |
| dc.description.department | Depto. de Física de Materiales | |
| dc.description.faculty | Fac. de Ciencias Físicas | |
| dc.description.refereed | TRUE | |
| dc.description.sponsorship | DGES | |
| dc.description.sponsorship | The Russian Fund for Basic Research | |
| dc.description.status | pub | |
| dc.eprint.id | https://eprints.ucm.es/id/eprint/26358 | |
| dc.identifier.doi | 10.1007/PL00021091 | |
| dc.identifier.issn | 0947-8396 | |
| dc.identifier.officialurl | http://link.springer.com/article/10.1007/PL00021091 | |
| dc.identifier.relatedurl | http://link.springer.com | |
| dc.identifier.uri | https://hdl.handle.net/20.500.14352/59134 | |
| dc.issue.number | 1 | |
| dc.journal.title | Applied Physics A-Materials Science&Processing | |
| dc.language.iso | eng | |
| dc.page.final | 58 | |
| dc.page.initial | 55 | |
| dc.publisher | Springer | |
| dc.relation.projectID | PB96-0639 | |
| dc.relation.projectID | 98-01-01084 | |
| dc.rights.accessRights | restricted access | |
| dc.subject.cdu | 538.9 | |
| dc.subject.keyword | Light-Emitting-Diodes | |
| dc.subject.keyword | Cathodoluminescence | |
| dc.subject.keyword | Films | |
| dc.subject.ucm | Física de materiales | |
| dc.title | Origin of yellow luminescence from reduced pressure grown bulk GaN crystals | |
| dc.type | journal article | |
| dc.volume.number | 71 | |
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| dspace.entity.type | Publication | |
| relation.isAuthorOfPublication | daf4b879-c4a8-4121-aaff-e6ba47195545 | |
| relation.isAuthorOfPublication | 68dabfe9-5aec-4207-bf8a-0851f2e37e2c | |
| relation.isAuthorOfPublication.latestForDiscovery | daf4b879-c4a8-4121-aaff-e6ba47195545 |
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