Structural and cathodoluminescence study of mechanically milled silicon

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dc.contributor.authorDíaz-Guerra Viejo, Carlos
dc.contributor.authorMontone, A.
dc.contributor.authorPiqueras de Noriega, Javier
dc.contributor.authorCardellini, F.
dc.date.accessioned2023-06-20T19:01:18Z
dc.date.available2023-06-20T19:01:18Z
dc.date.issued2002-01
dc.description© 2002 IOP Publishing Ltd. The authors thank M Vittori Antisari for useful discussions and suggestions and E Escudero for the measurements of the oxygen content. This work has been partially supported by MCYT (MAT2000-2119) and CICYT (MAT98-1306E).
dc.description.abstractThe structural and luminescent properties of nanocrystalline silicon produced by high-energy ball milling of Si single crystals have been investigated using transmission electron microscopy (TEM), x-ray diffraction (XRD) and cathodoluminescence (CL) in a scanning electron microscope. XRD measurements show that the average size of the nanocrystals in the milled samples is about 30 nm but TEM reveals a wide range of size distribution including crystallites with the dimension of few nanometres. Ball milling causes the appearance of a visible luminescence band at 1.61 eV, attributed to the presence of nanocrystals, and a near-infrared band peaked at about 0.79 eV which is suggested to be related to the high density of extended defects formed during the mechanical treatment. These bands, attributed to processes in Si, are not observed in the cathodoluminescent spectra of untreated and ball-milled SiO2 powder.
dc.description.departmentDepto. de Física de Materiales
dc.description.facultyFac. de Ciencias Físicas
dc.description.refereedTRUE
dc.description.sponsorshipMCYT
dc.description.sponsorshipCICYT
dc.description.statuspub
dc.eprint.idhttps://eprints.ucm.es/id/eprint/26295
dc.identifier.citation[1] Cullis A G, Canham L T and Calcott P D J 1997 J. Appl. Phys. 82 909 [2] Zhao X, Schoenfeld O, Kusano J, Aoyagi Y and Sugano T 1994 Japan. J. Appl. Phys. 33 L649 [3] Shimizu-Iwayama T, Nakao S and Saitoh K 1994 Appl. Phys. Lett. 65 1814 [4] Mutti P, Ghislotti G, Bertoni S, Bonoldi L, Gerofolini G F, Meda L, Grilli E and Guzzi M 1995Appl. Phys. Lett. 66 851 [5] Kawaguchi T and Miyamiza S 1993 Japan. J. Appl. Phys. 32 L215 [6] Cullis A G and Canham L T 1991Nature 353 335 [7] Kanemitsu Y 1994 Phys. Rev.B49 16845 [8] Shimizu-Iwayama T, Kurumado N, Hole D E and Townsend P D 1998 J. Appl. Phys. 83 6018 [9] Andersen O K and Veje E 1996 Phys. Rev.B53 15643 [10] Koch C C 1993Nanostruct. Mater. 2 109 [11] Gaffet E and Harmelin M 1990 J. Less-Common Met. 157 201 [12] Shen T D, Koch C C, McCormick T L, Nemanich R J, Huang J Y and Huang J G 1995 J. Mater. Res. 10 139 [13] Shen T D, Shmagin I, Koch C C, Kolbas R M, Fahmy Y, Bergman L, Nemanich R J, McClure M T, Sitar Z and Quan M X 1997 Phys. Rev.B 55 7615 [14] Cullis A G, Canham L T, Williams G M, Smith P W and Doser O D 1994 J. Appl. Phys. 75 493 [15] Suzuki T, Sakai T, Zhang L and Nishiyama Y 1995 Appl. Phys. Lett. 66 215 [16] Mitsui T, Yamamoto N, Takemoto K and Nittono O 1994 Japan. J. Appl. Phys. 33 L342 [17] Piqueras J, Mendez B, Plugaru R, Craciun G, Garc ía J A and Remon A 1999 ´ Appl. Phys. A 68 329 [18] Williamson G K and Hall W H 1953 Acta metall. 1 22 [19] Costa J, Roura P, Morante J R and Bertran E 2000 J. Appl. Phys. 83 1788 [20] Koyama H and Fauchet P M 1998 J. Appl. Phys. 87 7879 [21] Hao L-Y, Hou B-H, Yang B-X and Xu X-L 1998 Phys. Rev.B 57 12841 [22] McKnight S W and Palik E D 1980 J. Non-Cryst. Solids 40 595 [23] Tsybeskov L, Vandyshev Ju V and Fauchet P M 1994 Phys. Rev.B49 7821 [24] Arakaki O, Hatta A, Ito T and Hiraki A 1994 Japan. J. Appl. Phys. 33 6586 [25] Rams J, Mendez B, Craciun G, Plugaru R and Piqueras J 1999 Appl. Phys. Lett. 74 1728 [26] Fukuda Y, Furuya K, Ishikawa N and Saito T 1997 J. Appl. Phys. 82 5718 [27] Ito T, Motoi K, Arakaki O, Hatta A and Hiraki A 1994 Japan. J. Appl. Phys. 33 L941 [28] Fauchet P M, Ettedgui E, Raisanen A, Brillson L J, Seiferth F, Kurinec S K, Gao Y, Peng C and Tsybeskov L 1993 Mater. Res. Soc. Symp. Proc. 298 271 [29] Koch F 1993 Mater. Res. Soc. Symp. Proc. 298 319 [30] Young A P, Schafer J, Jessen G H, Bandhu R, Brillson L J, Lucovsky G and Niimi H 1998 J. Vac. Sci. Technol.B16 2177 [31] Savchouk A U, Ostapenko S, Nowak G, Lagowski J and Jastrzebski L 1995 Appl. Phys. Lett. 67 82 [32] Drozdov N A, Patrin A A and Tkachev V D 1977 Phys. Status Solidi b 83 K137 [33] Sauer R, Weber J and Stolz J 1985 Appl. Phys. A 36 1 [34] Sekiguchi T and Sumino K 1996 J. Appl. Phys. 79 3253
dc.identifier.issn0268-1242
dc.identifier.officialurlhttp://dx.doi.org/10.1088/0268-1242/17/1/312
dc.identifier.relatedurlhttp://iopscience.iop.org
dc.identifier.urihttps://hdl.handle.net/20.500.14352/59119
dc.issue.number1
dc.journal.titleSemiconductor Science and Technology
dc.language.isoeng
dc.page.final82
dc.page.initial77
dc.publisherIop Publishing Ltd
dc.relation.projectIDMAT2000-2119
dc.relation.projectIDMAT98-1306E
dc.rights.accessRightsrestricted access
dc.subject.cdu538.9
dc.subject.keywordOxidized Porous Silicon
dc.subject.keywordVisible Photoluminescence
dc.subject.keywordLuminescence Properties
dc.subject.keywordOptical-Properties
dc.subject.keywordThin-Films
dc.subject.keywordBand-Tail
dc.subject.keywordSi
dc.subject.keywordEmission
dc.subject.keywordStates
dc.subject.ucmFísica de materiales
dc.titleStructural and cathodoluminescence study of mechanically milled silicon
dc.typejournal article
dc.volume.number17
dspace.entity.typePublication
relation.isAuthorOfPublicationb1b44979-3a0d-45d7-aa26-a64b0dbfee18
relation.isAuthorOfPublication.latestForDiscoveryb1b44979-3a0d-45d7-aa26-a64b0dbfee18
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