Luminescence from erbium oxide grown on silicon
| dc.book.title | Progress in Semiconductor Materials for Optoelectronic Applications | |
| dc.contributor.author | Nogales Díaz, Emilio | |
| dc.contributor.author | Méndez Martín, María Bianchi | |
| dc.contributor.author | Piqueras De Noriega, Francisco Javier | |
| dc.contributor.author | Plugaru, R | |
| dc.contributor.author | García, J. A. | |
| dc.contributor.author | Tate, T. J. | |
| dc.date.accessioned | 2023-06-20T21:08:44Z | |
| dc.date.available | 2023-06-20T21:08:44Z | |
| dc.date.issued | 2002 | |
| dc.description | © 2002 Materials Research Society. Conference on Progress in Semiconductor Materials for Optoelectron Applications held at the 2001 MRS Fall Meeting. (2001. Boston). This work was supported by DGI (project MAT2001-2119) and by the Scientific Cooperation Program between Spain and Romania. | |
| dc.description.abstract | The luminescence properties of erbium oxide grown on crystalline and amorphous silicon substrates were studied by means of photo- and cathodoluminescence techniques. Differences in the luminescence spectra for samples grown on the two type., of substrates used are explained in terms of the different types of erbium centers formed by taking into account the substrate properties and the thermal treatments during growth. For comparison, erbium implanted and oxygen coimplanted crystalline and amorphous silicon have been also investigated by luminescence techniques. In the implanted samples, the sharp transitions from erbium ions in the visible range were quenched and the main emission corresponds to the intraionic transitions in Er3+ ions in the infrared range peaked at 1,54 mum. | |
| dc.description.department | Depto. de Física de Materiales | |
| dc.description.faculty | Fac. de Ciencias Físicas | |
| dc.description.refereed | TRUE | |
| dc.description.sponsorship | DGI | |
| dc.description.sponsorship | Scientific Cooperation Program between Spain and Romania | |
| dc.description.status | pub | |
| dc.eprint.id | https://eprints.ucm.es/id/eprint/24563 | |
| dc.identifier.isbn | 1-55899-628-1 | |
| dc.identifier.issn | 0272-9172 | |
| dc.identifier.officialurl | http://dx.doi.org/10.1557/PROC-692-H9.14.1 | |
| dc.identifier.relatedurl | http://journals.cambridge.org/ | |
| dc.identifier.relatedurl | http://www.dtic.mil/cgi-bin/GetTRDoc?Location=U2&doc=GetTRDoc.pdf&AD=ADP012647 | |
| dc.identifier.uri | https://hdl.handle.net/20.500.14352/60812 | |
| dc.issue.number | 692 | |
| dc.journal.title | Progress in Semiconductor Materials for Optoelectronic Applications | |
| dc.page.final | 460 | |
| dc.page.initial | 455 | |
| dc.page.total | 6 | |
| dc.publisher | Materials Research Society | |
| dc.relation.ispartofseries | MRS Online Proceedings Library | |
| dc.relation.projectID | MAT2001-2119 | |
| dc.rights.accessRights | metadata only access | |
| dc.subject.cdu | 538.9 | |
| dc.subject.keyword | Er | |
| dc.subject.keyword | Si | |
| dc.subject.keyword | Photoluminescence | |
| dc.subject.ucm | Física de materiales | |
| dc.title | Luminescence from erbium oxide grown on silicon | |
| dc.type | book part | |
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| dspace.entity.type | Publication | |
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