Estudio de la estructura electrónica y de las propiedades termoeléctricas de nanohilos semiconductores mediante un modelo de dos bandas
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2019
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Abstract
Se desarrolla un modelo de dos bandas con el que describir los estados electrónicos en nanohilos de semiconductores de intervalo prohibido estrecho, como el PbTe o el SnTe. Así, se determina la estructura de subbandas, y se encuentran estados de superficie localizados, precisamente, en la parte más externa del nanohilo. Además, se desarrolla un método con el que estudiar un nanohilo rugoso, observando como sus estados de superficie se localizan en las partes más anchas, con el consiguiente aplanamiento de las subbandas. Y, finalmente, se determinan las propiedades termoeléctricas de los nanohilos, observando como la reducción del radio de los mismos puede originar una mejora de las propiedades termoeléctricas, debido a la mayor difusión de los fonones en nanoestrucuturas. No obstante, el efecto de los estados de superficie es, en ocasiones, contrario a la mejora de la figura de merito ZT. Y es por eso que, además del nanoestructurado, la modulación del radio de los nanohilos, que suprimiría parcialmente la conducción de los estados de superficie, se postula como una estrategia con la que mejorar las propiedades termoeléctricas.
We developed a two-band model with which to describe electronic states in nanowires composed of narrow gap semiconductors, such as PbTe or SnTe. Thus, we found their subbands structure, as well as surface states, which are located in the outer areas of the nanowire. Furthermore, we created a method that enabled us to study a rough nanowire, whose surface states are in the widest areas, leading to a flattening of the subbands. Finally, we computed the thermoelectrical properties of these nanowires, and found that reducing their radii may lead to an enhancement of their efficiency, due to larger phonon scattering in nanostructures. However, surface states may sometimes decrease the figure of merit ZT of nanowires. Therefore, not only nanostructuring, but also modulating the nanowires radii, which may suppress electrical conduction due to surface states, is regarded as a feasible strategy for improving thermoelectrical properties.
We developed a two-band model with which to describe electronic states in nanowires composed of narrow gap semiconductors, such as PbTe or SnTe. Thus, we found their subbands structure, as well as surface states, which are located in the outer areas of the nanowire. Furthermore, we created a method that enabled us to study a rough nanowire, whose surface states are in the widest areas, leading to a flattening of the subbands. Finally, we computed the thermoelectrical properties of these nanowires, and found that reducing their radii may lead to an enhancement of their efficiency, due to larger phonon scattering in nanostructures. However, surface states may sometimes decrease the figure of merit ZT of nanowires. Therefore, not only nanostructuring, but also modulating the nanowires radii, which may suppress electrical conduction due to surface states, is regarded as a feasible strategy for improving thermoelectrical properties.
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Máster en Nanofísica y Materiales Avanzados. Facultad de Ciencias Físicas. Curso 2018-2019